NAND04GW3B2AN1E STMICROELECTRONICS [STMicroelectronics], NAND04GW3B2AN1E Datasheet - Page 47

• Manufacturer Part Number: NAND04GW3B2AN1E
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

NAND04GW3B2B, NAND08GW3B2A
Figure 23. Data Input Latch AC Waveforms
1.
Figure 24. Sequential Data Output after Read AC Waveforms
1. CL = Low, AL = Low, W = High.
Data In Last is 2112.
CL
AL
I/O
W
E
I/O
RB
R
E
(ALSetup time)
tALLWH
tBHRL
(R Accesstime)
tWLWH
tRLQV
(Data Setup time)
tDVWH
tRHRL1
(Read Cycle time)
Data Out
(R High Holdtime)
tWLWL
tRLRL1
Data In 0
tRLQV
(Data Hold time)
tDVWH
tWHDX
tWLWH
tRHQZ
Data Out
Data In 1
tDVWH
tWHDX
Data In
Data Out
Last
tEHQZ
tRLQV
tWLWH
tWHDX
(E Hold time)
tWHEH
DC and AC parameters
tRHQZ
(CL Hold time)
tWHCLH
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