M45PE80-VMN6P NUMONYX [Numonyx B.V], M45PE80-VMN6P Datasheet - Page 36

• Manufacturer Part Number: M45PE80-VMN6P
• Description: 8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
• Manufacturer: NUMONYX [Numonyx B.V]

DC and AC parameters
36/47
Table 12.
1. t
2. Value guaranteed by characterization, not 100% tested in production.
3. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one
Symbol
t
t
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
WHSL
SHWL
DVCH
CHDX
CHSH
SHCH
CLQV
CLQX
SHRH
PW
CH
SLCH
CHSL
SHSL
DP
PP
CL
sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤ 256)
t
t
CH
f
f
PE
SE
C
R
(1)
(1)
(2)
(3)
(3)
(2)
+ t
(2)
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
CLL
DIS
f
DH
HO
t
C
V
AC characteristics (25 MHz operation)
Clock Frequency for the following
instructions: FAST_READ, PW, PP, PE,
SE, DP, RDP, WREN, WRDI, RDSR
Clock Frequency for READ instructions
Clock High Time
Clock Low Time
Clock Slew Rate
S Active Setup Time (relative to C)
S Not Active Hold Time (relative to C)
Data In Setup Time
Data In Hold Time
S Active Hold Time (relative to C)
S Not Active Setup Time (relative to C)
S Deselect Time
Output Disable Time
Clock Low to Output Valid
Output Hold Time
Chip should have been deselected
before Reset is de-asserted
Write Protect Setup Time
Write Protect Hold Time
S to Deep Power-down
S High to Standby Mode
Page Write Cycle Time (256 bytes)
Page Write Cycle Time (n bytes)
Page Program Cycle Time (256 bytes)
Page Program Cycle Time (n bytes)
Page Erase Cycle Time
Sector Erase Cycle Time
Test conditions specified in
Parameter
(2)
(peak to peak)
C
Table 8
Min.
D.C.
D.C.
0.03
200
100
18
18
10
10
10
10
10
50
and
5
5
0
Table 9
n*0.8/256
n*0.8/256
10.2+
Typ.
0.4+
1.2
11
10
1
Max.
25
15
15
25
20
30
20
3
5
5
M45PE80
MHz
MHz
V/ns
Unit
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
s