IS42S32400E-6B ISSI [Integrated Silicon Solution, Inc], IS42S32400E-6B Datasheet - Page 17

• Manufacturer Part Number: IS42S32400E-6B
• Description: 4M x 32 128Mb SYNCHRONOUS DRAM
• Manufacturer: ISSI [Integrated Silicon Solution, Inc]

IS42S32400E, IS45S32400E
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Integrated Silicon Solution, Inc. - www.issi.com
Rev. D
05/18/09
SYMBOL PARAMETER
—
—
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
cac
rcd
rac
rc
ras
rp
rrd
ccd
dpl
dal
rbd
wbd
rql
wdl
pql
qmd
dmd
mrd
Clock Cycle Time
Operating Frequency
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
rcd
+ t
cac
)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
166
-6
10
—
—
—
-2
—
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
-7
10
–2
—
—
—
—
7
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
-75E
133
7.5
—
—
—
—
-1
2
2
4
9
6
2
2
1
2
4
3
0
2
0
2
0
2
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
17