CS18LV10245CC ETC1 [List of Unclassifed Manufacturers], CS18LV10245CC Datasheet - Page 5

• Manufacturer Part Number: CS18LV10245CC
• Description: HIgh Speed Super Low Power SRAM
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

Parameter
1. Typical characteristics are at TA = 25
2. These are absolute values with respect to device ground and all overshoots due to system or tester
3.
Parameter
1. Vcc = 3.0V, T A = + 25
Copyright
Name
Name
V
V
I
I
V
V
I
I
I
I
IL
OL
CC
CCSB
CCSB1
T
DC ELECTRICAL CHARACTERISTICS
notice are included.
Fmax = 1/t
DATA RETENTION CHARACTERISTICS
CCDR
V
IL
IH
OL
OH
CDR
t
RD
R
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current V
Output Leakage
Current
Output Low Voltage
Output High Voltage
Operating Power
Supply Current
Standby Supply - TTL
Standby Current
-CMOS
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
RC
2004 March Chiplus Semiconductor Corp. All rights reserved.
CC
.
for Data Retention
Parameter
Parameter
(2)
(2)
o
C. 2. t
128K-Word By 8 Bit
High Speed Super Low Power SRAM
RC
= Read Cycle Time.
V
/OE=V
V
V
/CE=V
/CE=V
/CE≧V
V
CC
CC
CC
CC
CC
o
/CE≧V
V
/CE≧V
V
C.
=MAX, V
=MAX, /CE=V
=MAX, I
=MIN, I
-0.2V or V
Test Conduction
IN
IN
See Retention Waveform
≧V
≧V
IL
IH
IN
Test Conduction
CC
, I
, I
, V
CC
CC
-0.2V, V
DQ
DQ
CC
CC
OH
IO
-0.2V or V
-0.2V or V
OL
=0mA, F=F
=0mA,
-0.2V,
-0.2V,
IN
=0V to V
= -1mA
IN
=0 to V
= 2mA
≦0.2V
IN
IN
≧
, or
CC
CC
IN
IN
MAX
≦0.2V
≦0.2V
( TA = 0 to + 70
( TA = 0 to +70
(3)
MIN TYP
-0.5
2.0
2.4
MIN
t
1.5
RC
0
(2)
o
o
C )
0.3
C )
TYP
CS18LV10245
(1)
0.2
Vcc+0.2
(1)
MAX
0.8
0.4
35
10
1
1
2
MAX Unit
2.0
.
Unit
mA
mA
uA
uA
uA
V
V
V
V
Rev. 1.2
uA
ns
ns
V
P 5