BGD712C_10 NXP [NXP Semiconductors], BGD712C_10 Datasheet
BGD712C_10
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BGD712C_10 Summary of contents
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BGD712C 750 MHz, 18.5 dB gain power doubler amplifier Rev. 3 — 29 September 2010 1. Product profile 1.1 General description Hybrid high dynamic range amplifier module in SOT115J package operating at a supply voltage (DC). CAUTION ...
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NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number BGD712C 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V ...
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NXP Semiconductors 5. Characteristics Table 5. Characteristics Bandwidth 40 MHz to 750 MHz; V Symbol Parameter G power gain p SL slope cable equivalent FL flatness of frequency response S input return losses 11 S output return losses 22 ϕ ...
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NXP Semiconductors 6. Package outline Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads DIMENSIONS ...
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NXP Semiconductors 7. Revision history Table 6. Revision history Document ID Release date BGD712C v.3 20100929 • Modifications: • • BGD712C v.2 20070816 BGD712C v.1 20060502 BGD712C Product data sheet Data sheet status Product data sheet The format of this ...
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NXP Semiconductors 8. Legal information 8.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...
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NXP Semiconductors Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified ...
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NXP Semiconductors 10. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . ...