BGD816L_01 NXP [NXP Semiconductors], BGD816L_01 Datasheet - Page 3

• Manufacturer Part Number: BGD816L_01
• Description: 860 MHz, 21.5 dB gain power doubler amplifier
• Manufacturer: NXP [NXP Semiconductors]

Philips Semiconductors
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V
2001 Nov 15
G
SL
FL
s
s
s
CTB
X
SYMBOL
11
22
21
mod
860 MHz, 21.5 dB gain power doubler amplifier
p
power gain
slope straight line
flatness straight line
input return losses
output return losses
phase response
composite triple beat
cross modulation
PARAMETER
B
= 24 V; T
f = 45 MHz
f = 870 MHz
f = 45 to 870 MHz; note 1
f = 45 to 100 MHz
f = 100 to 800 MHz
f = 800 to 870 MHz
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
f = 45 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 550 to 650 MHz
f = 650 to 750 MHz
f = 750 to 870 MHz
f = 870 to 914 MHz
f = 50 MHz
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
745 MHz; note 2
79 chs; f
547 MHz; note 3
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
745 MHz; note 2
79 chs; f
547 MHz; note 3
mb
= 35 C; Z
m
m
m
m
= 331.25 MHz; V
= 445.25 MHz; V
= 547.25 MHz; V
= 745.25 MHz; V
o
o
o
o
o
o
S
= 44 dBmV; f
= 44 dBmV; f
CONDITIONS
= 44 dBmV; f
= 44 dBmV; f
= 44 dBmV; f
= 44 dBmV; f
= Z
L
3
= 75
o
o
m
m
o
o
m
m
m
m
= 45.3 dBmV at
= 45.3 dBmV at
= 547.25 MHz
= 55.25 MHz
= 48.2 dBmV at
= 48.2 dBmV at
= 745.25 MHz
= 859.25 MHz
= 55.25 MHz
= 55.25 MHz
21.2
22
0.5
22
21
19
18
17
16
15
12
25
23
18
17
16
15
15
12
MIN.
0.4
45
1
TYP.
Product specification
BGD816L
21.8
23
1.5
0.1
+45
MAX.
0.25
0.5
66
59.5
55
59
68.5
64
61
58
60
66
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
UNIT