MCP6292 MICROCHIP [Microchip Technology], MCP6292 Datasheet - Page 3

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MCP6292

Manufacturer Part Number
MCP6292
Description
1.0 mA, 10 MHz Rail-to-Rail Op Amp
Manufacturer
MICROCHIP [Microchip Technology]
Datasheet

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AC ELECTRICAL SPECIFICATIONS
MCP6293/MCP6295 CHIP SELECT (CS) SPECIFICATIONS
© 2007 Microchip Technology Inc.
Electrical Characteristics: Unless otherwise indicated, T
V
AC Response
Gain Bandwidth Product
Phase Margin at Unity-Gain
Slew Rate
Noise
Input Noise Voltage
Input Noise Voltage Density
Input Noise Current Density
Electrical Characteristics: Unless otherwise indicated, T
V
CS Low Specifications
CS Logic Threshold, Low
CS Input Current, Low
CS High Specifications
CS Logic Threshold, High
CS Input Current, High
GND Current per Amplifier
Amplifier Output Leakage
Dynamic Specifications (Note 1)
CS Low to Valid Amplifier Output,
Turn-on Time
CS High to Amplifier Output High-Z
Hysteresis
Note 1:
OUT
OUT
≈ V
≈ V
DD
DD
/2, V
/2, V
Parameters
The input condition (V
at the output of op amp B (V
L
L
Parameters
= V
= V
DD
DD
/2, R
/2, R
L
L
= 10 kΩ to V
= 10 kΩ to V
IN
) specified applies to both op amp A and B of the MCP6295. The dynamic specification is tested
V
OUTB
Sym
I
I
t
V
t
HYST
V
CSH
I
OFF
CSL
ON
SS
IH
L
IL
L
, C
, C
).
L
L
= 60 pF, and CS is tied low (refer to
= 60 pF, and CS is tied low (refer to
GBWP
Sym
PM
0.8 V
SR
E
e
i
ni
ni
ni
V
Min
SS
DD
A
A
= +25°C, V
= +25°C, V
Min
0.01
0.01
0.01
-0.7
Typ
0.7
0.6
4
DD
DD
10.0
MCP6291/1R/2/3/4/5
Typ
= +2.4V to +5.5V, V
4.2
8.7
= +2.4V to +5.5V, V
0.2 V
65
7
3
V
Max
10
2
DD
DD
Max
Figure 1-2
Figure 1-2
Units
µA
µA
µA
µA
µs
µs
V
V
V
SS
SS
nV/√Hz
fA/√Hz
CS = V
CS = V
CS = V
CS = V
CS Low ≤ 0.2 V
V
V
CS High ≥ 0.8 V
V
V
µV
Units
MHz
and
V/µs
= GND, V
= GND, V
and
IN
DD
IN
DD
°
P-P
= V
= V
= 5.0V
= 5V
Figure
Figure
SS
DD
DD
DD
DD
DD
G = +1 V/V
f = 0.1 Hz to 10 Hz
f = 10 kHz
f = 1 kHz
/2, V
/2, V
CM
CM
Conditions
1-3).
1-3).
= V
= V
OUT
OUT
DD
DD
Conditions
DS21812E-page 3
DD
DD
, G = +1 V/V,
, G = +1 V/V,
= 0.9 V
= 0.1 V
/2,
/2,
DD
DD
/2,
/2

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