ADG623 AD [Analog Devices], ADG623 Datasheet - Page 2

• Manufacturer Part Number: ADG623
• Description: CMOS +-5 V/ +5V 4 OHM DUAL SPST SWITCHES
• Manufacturer: AD [Analog Devices]

ADG621/ADG622/ADG623–SPECIFICATIONS
DUAL SUPPLY
Parameter
ANALOG SWITCH
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
Temperature ranges are as follows: B Version, –40°C to +85°C.
Guaranteed by design, not subject to production test.
Analog Signal Range
On Resistance (R
On Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
C
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
C
I
I
ON
OFF
DD
SS
(ADG623 Only)
IN
S
D
D,
Channels (∆R
I
INL
(OFF)
, Digital Input Capacitance
(OFF)
C
S
or I
(ON)
INH
ON
ON
1
)
)
(V
D
INL
INH
S
DD
D
(OFF)
(OFF)
, I
= +5 V
FLAT(ON)
S
(ON)
2
BBM
)
10%, V
SS
4
5.5
0.25
0.35
0.9
± 0.01
± 0.25
± 0.01
± 0.25
± 0.01
± 0.25
0.005
2
75
120
45
70
30
–65
–90
230
20
20
70
0.001
0.001
+25 C
110
= –5 V
B Version
10%, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
V
–40 C to
+85 C
7
0.4
0.9
1.5
± 1
± 1
± 1
2.4
0.8
± 0.1
155
85
10
1.0
1.0
SS
to V
DD
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
µA typ
µA max
pF typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
pF typ
µA typ
µA max
µA typ
µA max
Test Conditions/Comments
V
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
V
R
V
R
V
R
V
V
Test Circuit 7
R
Test Circuit 8
R
Test Circuit 10
R
f = 1 MHz
f = 1 MHz
f = 1 MHz
V
Digital Inputs = 0 V or 5.5 V
Digital Inputs = 0 V or 5.5 V
DD
S
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
DD
= ± 4.5 V, I
= ± 4.5 V, I
= ± 3.3 V, I
= ± 4.5 V, V
= ± 4.5 V, V
= V
= 3.3 V, Test Circuit 4
= 3.3 V, Test Circuit 4
= 0 V, R
= 300 Ω, C
= 300 Ω, C
= 300 Ω, C
= 50 Ω, C
= 50 Ω, C
= 50 Ω, C
= V
= V
= +4.5 V, V
= +5.5 V, V
= +5.5 V, V
D
S2
INL
= ± 4.5 V, Test Circuit 3
= 3.3 V, Test Circuit 5
or V
S
= 0 Ω, C
L
L
L
S
S
S
L
L
L
D
D
= 5 pF, f = 1 MHz,
= 5 pF, f = 1 MHz,
= 5 pF, Test Circuit 9
INH
= –10 mA,
= –10 mA
= –10 mA
= 35 pF
= 35 pF
= 35 pF,
SS
SS
SS
=
=
= –4.5 V
= –5.5 V
= –5.5 V
4.5 V,
4.5 V,
L
= 1 nF,