ADG712 AD [Analog Devices], ADG712 Datasheet - Page 3

• Manufacturer Part Number: ADG712
• Description: CMOS Low Voltage 4 ohm Quad SPST Switches
• Manufacturer: AD [Analog Devices]

SPECIFICATIONS
Parameter
LEAKAGE CURRENTS
DIGITAL INPUTS
DYNAMIC CHARACTERISTICS
POWER REQUIREMENTS
NOTES
1
2
Specifications subject to change without notice.
REV. 0
ANALOG SWITCH
Temperature ranges are as follows: B Version: –40 C to +85 C.
Guaranteed by design, not subject to production test.
On-Resistance (R
On-Resistance Match Between
On-Resistance Flatness (R
Source OFF Leakage I
Drain OFF Leakage I
Channel ON Leakage I
Input High Voltage, V
Input Low Voltage, V
Input Current
t
t
Break-Before-Make Time Delay, t
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth –3 dB
C
C
C
I
Analog Signal Range
ON
OFF
DD
S
D
D
I
Channels ( R
(ADG713 Only)
INL
(OFF)
, C
(OFF)
S
or I
(ON)
INH
ON
ON
)
)
D
INL
INH
S
D
(OFF)
(OFF)
, I
FLAT(ON)
S
(ON)
1
(V
2
D
)
DD
= +3 V
5
0.1
0.005
13
7
7
3
–58
–78
–90
200
10
10
22
0.001
+25 C
0.01
0.1
0.01
0.1
0.01
0.1
10%, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)
B Version
–40 C to
+85 C
0 V to V
5.5
8
0.3
2.0
0.4
20
12
1
1.0
0.2
0.2
0.2
0.1
–3–
DD
Units
V
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
ns typ
ns typ
dB typ
dB typ
MHz typ
ns typ
ns max
ns max
ns min
pC typ
dB typ
pF typ
pF typ
pF typ
A typ
A max
A typ
A max
typ
max
typ
max
typ
ADG711/ADG712/ADG713
Test Conditions/Comments
V
Test Circuit 1
V
V
V
V
Test Circuit 2
V
Test Circuit 2
V
Test Circuit 3
V
R
V
R
V
R
V
V
Test Circuit 6
R
R
Test Circuit 7
R
Test Circuit 8
R
V
Digital Inputs = 0 V or 3 V
S
S
S
DD
S
S
S
IN
L
S
L
S
L
S1
S
L
L
L
L
DD
= 0 V to V
= 0 V to V
= 0 V to V
= 3 V/1 V, V
= 3 V/1 V, V
= V
= 2 V; Test Circuit 4
= 2 V; Test Circuit 4
= 1.5 V; R
= 50 , C
= 300 , C
= 300 , C
= 300 , C
= 50 , C
= 50 , C
= 50 , C
= V
= V
= +3.3 V;
= +3.3 V
D
S2
INL
= 1 V, or 3 V;
= 2 V; Test Circuit 5
or V
L
L
L
L
S
DD
DD
DD
= 5 pF, f = 10 MHz
L
L
L
= 0 , C
= 5 pF, f = 1 MHz;
= 5 pF, f = 10 MHz;
= 5 pF; Test Circuit 9
D
D
INH
, I
, I
, I
= 35 pF,
= 35 pF,
= 35 pF,
= 1 V/3 V;
= 1 V/3 V;
S
S
S
= –10 mA;
= –10 mA
= –10 mA
L
= 1 nF;