HS1-6664RH-T INTERSIL [Intersil Corporation], HS1-6664RH-T Datasheet - Page 3

• Manufacturer Part Number: HS1-6664RH-T
• Description: Radiation Hardened 8K x 8 CMOS PROM
• Manufacturer: INTERSIL [Intersil Corporation]

Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL:
BACKSIDE FINISH:
Metallization Mask Layout
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
(6883 m x 7798 m x 483 m 25.4 m)
271 x 307 x 19mils 1mil
MI: 6k
2k
M2: 10k
V
Silicon
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
DD
Å
Å
500
Å
1k
Å TiW
2k
Å Si/AI/Cu
Å Si/AI/Cu
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
3
HS-6664RH-T
HS-6664RH-T
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
PROCESS:
Type: Silox (S
Thickness: 8k
< 2.0e5 A/cm
110, 874, (27,719 Gates)
AVLSI
2
i
Å
O
2
)
1k
Å