HS1-6664RH-T INTERSIL [Intersil Corporation], HS1-6664RH-T Datasheet
HS1-6664RH-T
Manufacturer Part Number
HS1-6664RH-T
Description
Radiation Hardened 8K x 8 CMOS PROM
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HS1-6664RH-T.pdf
(3 pages)
Radiation Hardened 8K x 8 CMOS PROM
Intersil’s Satellite Applications Flow
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
The Intersil HS-6664RH-T is a radiation hardened 64K
CMOS PROM, organized in an 8K word by 8-bit format. The
chip is manufactured using a radiation hardened CMOS
process, and utilizes synchronous circuit design techniques
to achieve high speed performance with very low power
dissipation.
On-chip address latches are provided, allowing easy
interfacing with microprocessors that use a multiplexed
address/data bus structure. The output enable control (G)
simplifies system interfacing by allowing output data bus
control in addition to the chip enable control (E). All bits are
manufactured storing a logical “0” and can be selectively
programmed for a logical “1” at any bit location.
Specifications
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-666s4RH-T
are contained in SMD 5962-95626. A “hot-link” is provided
from our website for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Intersil’s Quality Management Plan (QM Plan), listing all
Class T screening operations, is also available on our
website.
www.intersil.com/quality/manuals.asp
Ordering Information
NOTE:
distribution, or 450 units direct.
5962R9562601TXC
HS1-6664RH/Proto
5962R9562601TYC
HS9-6664RH/Proto
INFORMATION
ORDERING
Minimum order quantity for -T is 150 units through
HS1-6664RH-T
HS1-6664RH/Proto
HS9-6664RH-T
HS9-6664RH/Proto
1
NUMBER
PART
TM
Data Sheet
(SAF) devices are fully
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
-55 to 125
-55 to 125
-55 to 125
-55 to 125
RANGE
TEMP.
(
o
C)
GND
DQ0
DQ1
DQ2
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
Features
• QML Class T, Per MIL-PRF-38535
• Radiation Performance
• Transient Output Upset >5 x 10
• Fast Access Time - 35ns (Typical)
• Single 5V Power Supply, Synchronous Operation
• Single Pulse 10V Field Programmable NiCr Fuses
• On-Chip Address Latches, Three-State Outputs
• Low Standby Current <500 A (Pre-Rad)
• Low Operating Current <15mA/MHz
Pinouts
† P must be hardwired at all times to V
www.intersil.com or 407-727-9207
- Gamma Dose ( ) 1 x 10
- No Latch-Up, SEU LET >100MeV/mg/cm
Satellite Applications Flow™ (SAF) is a trademark of Intersil Corporation.
HS9-6664RH-T (FLATPACK), CDFP3-F28
HS1-6664RH-T (SBDIP), CDIP2-T28
July 1999
GND
DQ0
DQ1
DQ2
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
10
11
12
13
14
1
2
3
4
5
6
7
8
9
TOP VIEW
TOP VIEW
5
|
RAD(Si)
Copyright
File Number 4609.1
DD
HS-6664RH-T
8
RAD (Si)/s
, except during programming.
28
27
26
25
24
23
22
21
20
19
18
17
16
15
©
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Intersil Corporation 1999
V
P
NC
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
DD
†
2
V
P
NC
A8
A9
A11
G
A10
E
DQ7
DQ6
DQ5
DQ4
DQ3
DD
†
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HS1-6664RH-T Summary of contents
Page 1
... Fast Access Time - 35ns (Typical) • Single 5V Power Supply, Synchronous Operation • Single Pulse 10V Field Programmable NiCr Fuses • On-Chip Address Latches, Three-State Outputs • Low Standby Current <500 A (Pre-Rad) • Low Operating Current <15mA/MHz Pinouts HS1-6664RH-T (SBDIP), CDIP2-T28 NC A12 ...
Page 2
Functional Diagram MSB LATCHED 8 A5 ADDRESS A6 REGISTER LSB E † † P must be hardwired at all times except during programming. Timing Waveform ADDRESSES ...
Page 3
Die Characteristics DIE DIMENSIONS: (6883 m x 7798 m x 483 m 25.4 m) 271 x 307 x 19mils 1mil METALLIZATION: Å Å Si/AI/Cu MI Å Å TiW 2k 500 Å Å Si/AI/Cu M2: 10k 2k SUBSTRATE POTENTIAL: ...