L6370Q STMICROELECTRONICS [STMicroelectronics], L6370Q Datasheet - Page 12

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L6370Q

Manufacturer Part Number
L6370Q
Description
2.5 A single high-side smart power switch
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Circuit description
3.7
12/16
The hysteresis (see
a superimposed ripple. The under voltage status is signalled via the DIAG1 and DIAG2
outputs (see the Diagnostic Truth
Demagnetization of inductive loads
An internal zener diode, limiting the voltage across the Power MOS to between 50 and 60 V
(V
devices. The maximum energy that can be absorbed from an inductive load is specified as
1J (at T
Figure 6.
Figure 7.
cl
), provides safe and fast demagnetization of inductive loads without external clamping
j
= 85°C) (see
L6370 short circuit operation waveforms
Inductive load equivalent circuit
Figure
Table
I
V
S
S
4) ensures a non intermittent behavior at low supply voltage with
3).
Doc ID 022313 Rev 1
50V
Table
7).
+V
RL
S
D95IN215A
OUTPUT
I
O
L
L6370Q

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