TLE6280 INFINEON [Infineon Technologies AG], TLE6280 Datasheet - Page 9

• Manufacturer Part Number: TLE6280
• Description: 3-Phase Bridge Driver IC
• Manufacturer: INFINEON [Infineon Technologies AG]

Estimation of power dissipation within the driver IC
The power dissipation within the driver IC is strongly dependent upon the use of the driver
and the external components. Nevertheless, a rough estimation of the worst case power dis-
sipation is possible.
Worst case calculation is:
P
With:
P
f
Q
n
const
I
V
P
This value can be reduced dramatically by the use of external gate resistors.
Recommended start up procedure
To assure the driver to be active and functional, a special initialization procedure is required
whenever the gate drive is enabled (V
enabled, after 10 s or later, positive-going transition signals at all ILx pins are required in or-
der to ensure proper start-up of the output driver. This procedure assures a proper wake up
the device and allowes to fill the bootstrap capacitors. Not filling the bootstrap capacitors
might lead to low Gate-Source voltages mainly in highside and can cause a short circuit de-
tection when the highside switches are activated. Not changing the ILx input signal after
enabling the device may cause the lowside outputs to stay in off conditions.
VS(open)
PWM
D
D
VS
RGate
gate
= (Q
gate
= Power dissipation in the driver IC
= Switching frequency
= Total gate charge of used MOSFET at 10V V
= number of switched Mosfets
= constant considering some leakage current in the driver and the power dissipa-
tion caused by the charge pump (nominally = 2)
= Current consumption of driver without connected Mosfets during switching
= Voltage at Vs
= Power dissipation in the external gate resistors
*n*const* f
PWM
+ I
VS(open)
) * V
MFP
Vs
9
- P
is changed from LO to HI). Every time the driver is
RGate
GS
Datasheet TLE6280GP
2007-07-19