MC68HC908GZ8 FREESCALE [Freescale Semiconductor, Inc], MC68HC908GZ8 Datasheet - Page 40
MC68HC908GZ8
Manufacturer Part Number
MC68HC908GZ8
Description
M68HC08 Microcontrollers
Manufacturer
FREESCALE [Freescale Semiconductor, Inc]
Datasheet
1.MC68HC908GZ8.pdf
(314 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC68HC908GZ8CFA
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MC68HC908GZ8MFA
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MC68HC908GZ8MFJ
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MC68HC908GZ8VFA
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MC68HC908GZ8VFJ
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
- Current page: 40 of 314
- Download datasheet (5Mb)
Memory
2.6.3 FLASH Page Erase Operation
Use this step-by-step procedure to erase a page (64 bytes) of FLASH memory to read as logic 1. A page
consists of 64 consecutive bytes starting from addresses $XX00, $XX40, $XX80, or $XXC0. The 44-byte
user interrupt vectors area also forms a page. Any FLASH memory page can be erased alone.
In applications that need more than 1000 program/erase cycles, use the 4-ms page erase specification
to get improved long-term reliability. Any application can use this 4-ms page erase specification.
However, in applications where a FLASH location will be erased and reprogrammed less than 1000 times,
and speed is important, use the 1-ms page erase specification to get a shorter cycle time.
40
10. After a time, t
1. Set the ERASE bit, and clear the MASS bit in the FLASH control register.
2. Read the FLASH block protect register.
3. Write any data to any FLASH location within the page address range of the block to be desired.
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Programming and erasing of FLASH locations cannot be performed by
code being executed from FLASH memory. While these operations must be
performed in the order shown, other unrelated operations may occur
between the steps.
RCV
NVS
Erase
NVH
(typical 1 μs), the memory can be accessed in read mode again.
(minimum 10 μs)
(minimum 5 μs)
MC68HC908GZ16 • MC68HC908GZ8 Data Sheet, Rev. 4
(minimum 1 ms or 4 ms)
NOTE
Freescale Semiconductor
Related parts for MC68HC908GZ8
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet:
Part Number:
Description:
Manufacturer:
Freescale Semiconductor, Inc
Datasheet: