KM684002-17 SAMSUNG [Samsung semiconductor], KM684002-17 Datasheet - Page 6

• Manufacturer Part Number: KM684002-17
• Description: 512Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range.
• Manufacturer: SAMSUNG [Samsung semiconductor]

KM684002, KM684002E, KM684002I
TIMING WAVE FORM OF READ CYCLE(2)
ADD
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. t
4. At any given temperature and voltage condition, t
5. Transition is measured 200
6. Device is continuously selected with CS=V
7. Address valid prior to coincident with CS transition low.
8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e.
TIMING WAVE FORM OF WRITE CYCLE(1)
CS
OE
Data Out
Vcc
Current
ADD
OE
CS
WE
Data In
Data Out
HZ
and t
OHZ
are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V
I
Icc
SB
§Æ
High-Z
from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
IL.
t
AS(4)
HZ
(Max.) is less than t
t
(WE=V
PU
(OE=Clock)
t
LZ(4,5)
t
t
OHZ(6)
OLZ
IH
)
50%
t
CO
t
t
OE
AA
LZ
- 6 -
(Min.) both for a given device and from device to device.
t
AW
t
WC
t
t
RC
CW(3)
t
WP(2)
Data Valid
t
DW
Data Valid
High-Z(8)
t
WR(5)
t
DH
OH
PRELIMINARY
or V
CMOS SRAM
OL
Levels.
t
t
t
OHZ
PD
OH
t
50%
HZ(3,4,5)
June -1997
Rev 3.0