PIC12F635-E/MD MICROCHIP [Microchip Technology], PIC12F635-E/MD Datasheet - Page 192
PIC12F635-E/MD
Manufacturer Part Number
PIC12F635-E/MD
Description
8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology
Manufacturer
MICROCHIP [Microchip Technology]
Datasheet
1.PIC12F635-EMD.pdf
(234 pages)
- Current page: 192 of 234
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PIC12F635/PIC16F636/639
15.12 SPI Timing: Analog Front-End (AFE) for PIC16F639
DS41232D-page 190
AC CHARACTERISTICS
Param
AF33
AF34
AF35
AF36
AF37
AF38
AF39
AF40
AF41
AF42
AF43
AF44
AF45
*
†
F
T
Parameter is characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Tcssc
T
T
Sym
T
T
T
T
T
T
SCCS
SCLK
T
SPI
T
SPI
CSH
CS
CS
SU
HD
DO
LO
HI
1
0
R
F
SCLK Frequency
CS fall to first SCLK edge
setup time
SDI setup time
SDI hold time
SCLK high time
SCLK low time
SDO setup time
SCLK last edge to CS rise
setup time
CS high time
CS rise to SCLK edge setup
time
SCLK edge to CS fall setup
time
Rise time of SPI data
(SPI Read command)
Fall time of SPI data
(SPI Read command)
Characteristic
Standard Operating Conditions (unless otherwise stated)
Supply Voltage
Operating temperature
LC Signal Input
Carrier Frequency
LCCOM connected to V
Min
100
150
150
100
500
—
30
50
—
50
50
—
—
Typ†
10
10
—
—
—
—
—
—
—
—
—
—
—
Max
150
—
—
—
—
—
—
—
—
—
—
—
3
SS
2.0V
-40°C
Sinusoidal 300 mV
125 kHz
Units
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
T
DD
SCLK edge when CS is high
V
to 90% of amplitude
V
to 10% of amplitude
AMB
DD
DD
3.6V
3.0V. Time is measured from 10%
3.0V. Time is measured from 90%
+85°C for industrial
© 2007 Microchip Technology Inc.
PP
Conditions
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