PIC12F635-E/MD MICROCHIP [Microchip Technology], PIC12F635-E/MD Datasheet - Page 165
PIC12F635-E/MD
Manufacturer Part Number
PIC12F635-E/MD
Description
8/14-Pin, Flash-Based 8-Bit CMOS Microcontrollers with nanoWatt Technology
Manufacturer
MICROCHIP [Microchip Technology]
Datasheet
1.PIC12F635-EMD.pdf
(234 pages)
- Current page: 165 of 234
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15.0
Absolute Maximum Ratings
Ambient temperature under bias....................................................................................................... -40°C to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, IOK (V
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA and PORTC (combined) ............................................................................ 95 mA
Maximum current sourced PORTA and PORTC (combined) ............................................................................ 95 mA
Maximum LC Input Voltage (LCX, LCY, LCZ)
Maximum LC Input Voltage (LCX, LCY, LCZ)
Maximum Input Current (rms) into device per LC Channel
Human Body ESD rating ........................................................................................................................ 4000 (min.) V
Machine Model ESD rating ...................................................................................................................... 400 (min.) V
Note 1:
© 2007 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
2:
ELECTRICAL SPECIFICATIONS
Power dissipation for PIC12F635/PIC16F636/639 (AFE section not included) is calculated as follows:
P
Power dissipation for AFE section is calculated as follows:
P
Specification applies to the PIC16F639 only.
Voltage spikes below V
Thus, a series resistor of 50-100 should be used when applying a ‘low’ level to the MCLR pin, rather than
pulling this pin directly to V
DIS
DIS
DD
= V
= V
with respect to V
DD
DD
IK
x {I
x I
(1)
(V
DD
ACT
............................................................................................................................... 800 mW
SS
I
DD
/V
< 0 or V
/V
DDT
O
- ∑ I
= 3.6V x 16 A = 57.6 W
SST
< 0 or V
SS
pin ................................................................................................................. 95 mA
OH
pin .............................................................................................................. 95 mA
I
SS
> V
} + ∑ {(V
(†)
................................................................................................... -0.3V to +6.5V
SS
at the MCLR pin, inducing currents greater than 80 mA, may cause latch-up.
O
DD
>V
.
SS
)
DD
(2)
(2)
DD
........................................................................... -0.3V to (V
)
loaded, with device ............................................................ 10.0 V
unloaded, without device ................................................. 700.0 V
-V
PIC12F635/PIC16F636/639
OH
) x I
OH
(2)
} + ∑(V
........................................................................... 10 mA
OL
x I
OL
).
DS41232D-page 163
DD
+ 0.3V)
20 mA
20 mA
PP
PP
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