M48T201V-70MH1TR STMICROELECTRONICS [STMicroelectronics], M48T201V-70MH1TR Datasheet - Page 28

• Manufacturer Part Number: M48T201V-70MH1TR
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 13.
1. Valid for Ambient Operating Temperature: T
2. RSTIN1 and RSTIN2 internally pulled-up to V
3. Outputs deselected.
4. For IRQ/FT & RST pins (Open Drain).
5. Conditioned outputs (E
6. External SRAM must match TIMEKEEPER SUPERVISOR chip V
28/35
V
I
OUT1
I
I
V
Sym
V
OHB
I
I
I
OUT2
LO
I
V
V
V
100K
currents will reduce battery life.
LI
I
V
CC1
CC2
V
BAT
CC
PFD
BAT
OH
SO
OL
IH
(2)
IL
(3)
(5)
(6)
resistor.
Input Leakage
Current
Output Leakage
Current
Supply Current
Supply Current
(Standby) TTL
Supply Current
(Standby) CMOS
Battery Current OSC
ON
Battery Current OSC
OFF
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
(open drain)
Output High Voltage
V
V
V
(Battery Back-up)
Power-fail Deselect
Voltage
Battery Back-up
Switchover Voltage
Battery Voltage
OH
OUT
OUT
DC characteristics
Battery Back-up
Parameter
Current (Active) V
Current
(4)
CON
- G
CON
) can only sustain CMOS leakage currents in the battery back-up mode. Higher leakage
V
Test condition
0V
OUT2
0V
I
OUT1
OUT2
Outputs open
I
E = V
OH
I
I
OL
OL
V
E = V
V
CC
= –1.0mA
= 2.1mA
> V
V
= 10mA
> V
OUT
A
= –1.0µA
IN
CC
CC
= 0 to 70°C; V
= 0V
BAT
CC
IH
–0.2
through 100K
V
V
–0.3
CC
–0.3
CC
(1)
–0.3
Min
2.2
2.4
2.0
4.1
CC
= 4.5 to 5.5V or 3.0 to 3.6V (except where noted).
resistor. WDI internally pulled-down to V
CC
M48T201Y
4.35
Typ
575
3.0
3.0
8
specification.
–70
V
CC
Max
800
100
100
100
0.8
0.4
0.4
3.6
4.5
±1
±1
15
5
3
+ 0.3
–0.3
Min
2.0
2.4
2.0
2.7
100mV
V
M48T201V
Typ
575
PFD
2.9
3.0
4
–85
–
SS
V
through
CC
Max
800
100
100
0.8
0.4
0.4
3.6
3.0
±1
±1
10
70
3
2
+ 0.3
Unit
mA
mA
mA
mA
µA
µA
nA
nA
µA
V
V
V
V
V
V
V
V
V