M48T201V-70MH1E STMICROELECTRONICS [STMicroelectronics], M48T201V-70MH1E Datasheet - Page 29

• Manufacturer Part Number: M48T201V-70MH1E
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M48T201Y, M48T201V
Table 13.
1. Valid for ambient operating temperature: T
2. RSTIN1 and RSTIN2 internally pulled-up to V
3. Outputs deselected.
4. For IRQ/FT & RST pins (open drain).
5. Conditioned outputs (E
6. External SRAM must match TIMEKEEPER
V
I
OUT1
I
I
V
Sym
OHB
V
I
I
I
V
OUT2
V
LO
I
V
100 K
currents will reduce battery life.
V
LI
I
CC1
CC2
V
BAT
CC
PFD
BAT
OH
OL
SO
(2)
IH
IL
(3)
(5)
(6)
resistor.
Input leakage current
Output leakage
current
Supply current
Supply current
(standby) TTL
Supply current
(standby) CMOS
Battery current OSC
ON
Battery current OSC
OFF
Input low voltage
Input high voltage
Output low voltage
Output low voltage
(open drain)
Output high voltage
V
V
V
backup)
Power-fail deselect
voltage
Battery backup
switchover voltage
Battery voltage
OH
OUT
OUT
DC characteristics
battery backup
Parameter
current (active)
current (battery
(4)
CON
- G
CON
) can only sustain CMOS leakage currents in the battery backup mode. Higher leakage
V
V
Test condition
0V
I
OUT2
0V
OUT1
I
OUT2
Outputs open
E = V
OH
I
I
OL
OL
V
E = V
CC
V
= –1.0 mA
A
= 2.1 mA
®
= 10 mA
> V
V
> V
OUT
= –1.0 µA
= 0 to 70°C; V
CC
IN
supervisor chip V
CC
= 0 V
BAT
CC
IH
–0.2
through 100 K
V
V
–0.3
CC
–0.3
CC
(1)
CC
–0.3
Min
2.2
2.4
2.0
4.1
= 4.5 to 5.5 V or 3.0 to 3.6 V (except where noted).
CC
resistor. WDI internally pulled-down to V
specification.
M48T201Y
4.35
Typ
575
3.0
3.0
8
–70
V
CC
Max
800
100
100
100
0.8
0.4
0.4
3.6
4.5
±1
±1
15
5
3
+ 0.3
–0.3
Min
2.0
2.4
2.0
2.7
100 mV
DC and AC parameters
V
M48T201V
Typ
PFD
575
2.9
3.0
4
–85
–
SS
V
CC
through
Max
800
100
100
0.8
0.4
0.4
3.6
3.0
±1
±1
10
70
3
2
+ 0.3
Unit
29/37
mA
mA
mA
mA
µA
µA
nA
nA
µA
V
V
V
V
V
V
V
V
V