TLC226S STMICROELECTRONICS [STMicroelectronics], TLC226S Datasheet - Page 2

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TLC226S

Manufacturer Part Number
TLC226S
Description
SENSITIVE GATE TRIACS
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
THERMAL RESISTANCES
GATE CHARACTERISTICS (maximum values)
P G (AV) = 0.1W
ELECTRICAL CHARACTERISTICS
* For either polarity of electrode A
TLC116 T/D/S/A ---> TLC386 T/D/S/A
2/5
Rth (j-l) DC Junction leads for DC
Rth (j-l) AC
(dV/dt)c *
Symbol
Symbol
Rth (j-a)
dV/dt *
V TM *
I DRM
I RRM
V GD
V GT
I H *
I GT
tgt
I L
Junction to ambient on printed circuit with Cu surface 1cm 2
Junction leads for 360 conduction angle ( F= 50 Hz)
V D =12V
V D =12V
V D =V DRM R L =3.3k
V D =V DRM I G = 40mA
dI G /dt = 0.5A/ s
IG= 1.2 I GT
I T = 100mA gate open
I TM = 4A tp= 380 s
V DRM Rated
V RRM Rated
Linear
V D =67%V DRM
gate open
(dI/dt)c = 1.3A/ms
P GM = 2W (tp = 20 s)
slope
(DC) R L =33
(DC) R L =33
Test Conditions
2
voltage with reference to electrode A
up
to
Parameter
Tj=110 C
Tj=110 C
Tj=110 C
Tj=110 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
Tj=25 C
I GM = 1A (tp = 20 s)
Quadrant
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-III-IV
I-II-III
1
.
IV
II
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MAX
TYP
TYP
TYP
V GM = 16V (tp = 20 s).
MIN
15
15
15
10
T
5
5
1
10
15
15
15
10
D
5
1
Suffix
1.85
0.01
0.75
Value
1.5
0.2
2
50
20
15
10
10
25
25
25
20
S
5
10
25
25
25
25
20
A
5
Unit
V/ s
V/ s
Unit
C/W
C/W
C/W
mA
mA
mA
mA
V
V
V
s

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