MK20DN512VMC10 FREESCALE [Freescale Semiconductor, Inc], MK20DN512VMC10 Datasheet - Page 33

• Manufacturer Part Number: MK20DN512VMC10
• Description: K20 Sub-Family
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6.4.1.3 Flash high voltage current behaviors
6.4.1.4 Reliability specifications
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
3. Write endurance represents the number of writes to each FlexRAM location at -40°C ≤Tj ≤ 125°C influenced by the cycling
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
Freescale Semiconductor, Inc.
n
n
n
t
n
n
t
t
t
nvmretee100
t
t
nvmwree128
nvmwree512
nvmretp10k
nvmretd10k
nvmretee10
nvmwree32k
n
n
Symbol
nvmwree16
nvmretp1k
nvmretd1k
nvmwree4k
nvmcycp
nvmcycd
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
endurance of the FlexNVM (same value as data flash) and the allocated EEPROM backup per subsystem. Minimum and
typical values assume all byte-writes to FlexRAM.
I
Symbol
I
DD_PGM
DD_ERS
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
Data retention after up to 10 K cycles
Data retention after up to 1 K cycles
Cycling endurance
Data retention up to 100% of write endurance
Data retention up to 10% of write endurance
Write endurance
Description
Average current adder during high voltage
flash programming operation
Average current adder during high voltage
flash erase operation
Description
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 4096
• EEPROM backup to FlexRAM ratio =
32,768
Table 22. Flash high voltage current behaviors
Table 23. NVM reliability specifications
K20 Sub-Family Data Sheet, Rev. 1, 6/2012.
General Business Information
FlexRAM as EEPROM
Program Flash
Preliminary
Data Flash
1.27 M
315 K
10 M
80 M
10 K
10 K
35 K
Min.
20
20
20
5
5
5
Min.
—
—
Peripheral operating requirements and behaviors
400 M
175 K
1.6 M
6.4 M
Typ.
50 M
50 K
50 K
j
100
100
100
≤ 125°C.
50
50
50
1
Typ.
2.5
1.5
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
6.0
4.0
cycles
cycles
writes
writes
writes
writes
writes
years
years
years
years
years
years
Unit
Unit
mA
mA
Notes
2
2
3
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