M29W800DB STMICROELECTRONICS [STMicroelectronics], M29W800DB Datasheet - Page 41

• Manufacturer Part Number: M29W800DB
• Description: 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

REVISION HISTORY
Table 30. Document Revision History
03-Dec-2001
16-Sep-2004
01-Mar-2002
31-Mar-2003
13-Feb-2004
August 2001
23-Apr-2004
11-Apr-2002
Date
Version
1.0
2.0
3.0
4.0
4.1
5.0
6.0
7.0
First Issue
Block Protection Appendix added, SO44 drawing and package mechanical data updated,
CFI Table 26, address 39h/72h data clarified, Read/Reset operation during Erase
Suspend clarified
Description of Ready/Busy signal clarified (and
Clarified allowable commands during block erase
Clarified the mode the device returns to in the CFI Read Query command section
Temperature range 1 added
Document promoted from Preliminary Data to full Data Sheet
Erase Suspend Latency Time (typical and maximum) and Data Retention parameters
added to Table
and Typical after 100k W/E Cycles column removed. Minimum voltage corrected for 70ns
Speed Class in
Logic Diagram and Data Toggle Flowchart corrected.
Lead-free package options E and F added to
TSOP48 package Outline and Mechanical Data updated.
TFBGA48 6x8mm – 6x8 active ball array – 0.80mm pitch added.
Table 9.Operating and AC Measurement Conditions
Figure 3., SO Connections
45ns speed class added.
Table 6., Program, Erase Times and Program, Erase Endurance
Table
9.,
Operating and AC Measurement
updated.
Revision Details
Table 20., Ordering Information
Figure 15.
updated for 70ns speed option.
M29W800DT, M29W800DB
modified)
Conditions.
Scheme.
Cycles,
41/42