CY7C1399B-12VXI CYPRESS [Cypress Semiconductor], CY7C1399B-12VXI Datasheet

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CY7C1399B-12VXI

Manufacturer Part Number
CY7C1399B-12VXI
Description
256K(32K x 8) Static RAM
Manufacturer
CYPRESS [Cypress Semiconductor]
Datasheet
Cypress Semiconductor Corporation
Document #: 38-05071 Rev. *D
Features
Functional Description
The CY7C1399B is a high-performance 3.3V CMOS Static
RAM organized as 32,768 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE) and
Selection Guide
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
• Single 3.3V power supply
• Ideal for low-voltage cache memory applications
• High speed
• Low active power
• Low-power alpha immune 6T cell
• Plastic SOJ and TSOP packaging
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
— 10/12/15 ns
— 216 mW (max.)
Logic Block Diagram
CE
WE
OE
A
A
A
A
A
A
A
A
A
A
0
1
2
3
4
5
6
7
8
9
[1]
INPUT BUFFER
DECODER
32K x 8
COLUMN
ARRAY
L
• 3901 North First Street
1399B-10
POWER
DOWN
500
10
60
50
1399B-12
active LOW Output Enable (OE) and three-state drivers. The
device has an automatic power-down feature, reducing the
power consumption by more than 95% when deselected.
An active LOW Write Enable signal (WE) controls the
writing/reading operation of the memory. When CE and WE
inputs are both LOW, data on the eight data input/output pins
(I/O
addressed by the address present on the address pins (A
through A
the device and enabling the outputs, CE and OE active LOW,
while WE remains inactive or HIGH. Under these conditions,
the contents of the location addressed by the information on
address pins is present on the eight data input/output pins.
The input/output pins remain in a high-impedance state unless
the chip is selected, outputs are enabled, and Write Enable
(WE) is HIGH. The CY7C1399B is available in 28-pin standard
300-mil-wide SOJ and TSOP Type I packages.
500
12
55
50
0
through I/O
• San Jose
256K(32K x 8) Static RAM
14
). Reading the device is accomplished by selecting
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
0
1
2
3
4
5
6
7
1399B-15
500
15
50
50
7
,
) is written into the memory location
CA 95134
Pin Configurations
GND
I/O 0
I/O
I/O
A
A
A
A
A
1399B-20
A
A
A
A
A
10
11
12
13
14
5
6
7
8
9
1
2
500
20
45
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Revised July 11, 2005
Top View
SOJ
408-943-2600
CY7C1399B
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
WE
A
A
A
A
OE
A
CE
I/O
I/O
I/O
I/O
I/O
CC
4
3
2
1
0
3
7
6
5
4
Unit
mA
µA
µA
ns
0

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CY7C1399B-12VXI Summary of contents

Page 1

... The input/output pins remain in a high-impedance state unless the chip is selected, outputs are enabled, and Write Enable (WE) is HIGH. The CY7C1399B is available in 28-pin standard 300-mil-wide SOJ and TSOP Type I packages. POWER DOWN ...

Page 2

... MAX ≥ V Max ≥ V ≤ MAX , CE ≥ V Max. V – 0.3V [4] ≤ 0.3V, V – 0.3V ≥V – 0. ≤0.3V MAX CY7C1399B I GND ...

Page 3

... MAX , CE ≥ V Max. V –0.3V [4] ≥ V ≤ 0.3V, – 0.3V WE≥V –0.3V or WE≤ 0.3V, CC f=f MAX Description Test Conditions T = 25° MHz 351Ω 1.73V CY7C1399B 1399B-15 1399B-20 Min. Max. Min. Max. 2.4 2.4 0.4 0.4 2 +0.3V +0.3V –0.3 0.8 –0.3 0.8 –1 +1 –1 +1 –5 +5 – ...

Page 4

... The minimum write cycle time for write cycle #3 (WE controlled, OE LOW) is the sum of t Document #: 38-05071 Rev. *D [6] Description [7] [7, 8] [7] [7, 8] [9] [7] is less than less than t HZCE LZCE HZOE = Test Loads. Transition is measured ±500 mV from steady state voltage. CY7C1399B 1399B-10 1399B-12 Min. Max. Min. Max ...

Page 5

... Description [7] [7, 8] [7] [7, 8] [9] [7] (Over the Operating Range - L version only) Description Conditions Com’ 2.0V > V – 0.3V > V – 0. < 0.3V IN CY7C1399B 1399B-15 1399B-20 Min. Max. Min. Max ...

Page 6

... WE is HIGH for read cycle. 13. Address valid prior to or coincident with CE transition LOW. Document #: 38-05071 Rev. *D DATA RETENTION MODE > CDR OHA ACE t DOE t LZOE 50 CY7C1399B 3. DATA VALID t HZOE t HZCE IMPEDANCE DATA VALID t PD 50% HIGH ICC ISB Page ...

Page 7

... During this period, the I/Os are in the output state and input signals should not be applied. Document #: 38-05071 Rev. *D [9, 14, 15 PWE t SD DATA IN [9, 14, 15 DATA [10, 15 DATA t HZWE CY7C1399B VALID SCE VALID VALID IN t LZWE Page ...

Page 8

... L Data Out Data High Z Ordering Information Speed (ns) Ordering Code 12 CY7C1399B-12VC CY7C1399B-12VXC CY7C1399B-12ZC CY7C1399B-12ZXC CY7C1399BL-12ZC CY7C1399BL-12ZXC CY7C1399B-12VXI 15 CY7C1399B-15VC CY7C1399B-15VXC CY7C1399B-15ZC CY7C1399B-15ZXC CY7C1399BL-15VC CY7C1399BL-15VXC CY7C1399BL-15ZXC CY7C1399B-15VI CY7C1399B-15VXI CY7C1399B-15ZI CY7C1399B-15ZXI 20 CY7C1399B-20ZC CY7C1399B-20ZXC Document #: 38-05071 Rev. *D Mode Deselect/Power-Down Read Write Deselect, Output Disabled ...

Page 9

... Cypress against all charges. 28-Lead (300-Mil) Molded SOJ V21 MIN. MAX. PIN 0.291 0.330 0.300 0.350 28 SEATING PLANE 0.120 0.140 0.004 0.025 MIN. CY7C1399B A DETAIL EXTERNAL LEAD DESIGN 0.026 0.032 0.013 0.014 0.019 0.020 OPTION 1 OPTION 2 0.007 0.013 0.262 0.272 ...

Page 10

... Document History Page Document Title: CY7C1399B 256K(32K x 8) Static RAM Document Number: 38-05071 ISSUE REV. ECN NO. DATE ** 107264 05/25/01 *A 107533 06/28/01 *B 116472 09/17/02 *C 224340 See ECN *D 386100 See ECN Document #: 38-05071 Rev. *D ORIG. OF CHANGE DESCRIPTION OF CHANGE SZV Change from Spec #: 38-01102 to 38-05071 MAX Add Low Power CEA Add applications foot note to data sheet, page 1 ...

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