IS61C256AL-10J ISSI [Integrated Silicon Solution, Inc], IS61C256AL-10J Datasheet - Page 8

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IS61C256AL-10J

Manufacturer Part Number
IS61C256AL-10J
Description
32K X 8 HIGH-SPEED CMOS STATIC RAM
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet
DATA RETENTION WAVEFORM (CE
IS61C256AL
DATA RETENTION SWITCHING CHARACTERISTICS
Note:
8
Symbol
1. Typical Values are measured at V
V
I
t
t
DR
RDR
SDR
DR
4.5V
2.2V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
DD
VDD
V
CE
for Data Retention
DR
DD
= 5V, T
t
SDR
See Data Retention Waveform
See Data Retention Waveform
Test Condition
V
V
See Data Retention Waveform
IN
DD
A
≥ V
= 25
= 2.0V, CE ≥ V
CE
CE
CE
CE Controlled)
DD
o
C and not 100% tested.
– 0.2V, or V
Integrated Silicon Solution, Inc. — www.issi.com —
DD
IN
– 0.2V
Data Retention Mode
CE ≥ VDD - 0.2V
≤ V
SS
+ 0.2V
Com.
Ind.
t
RDR
Min.
2.0
t
RC
0
Typ.
50
(1)
ISSI
1-800-379-4774
Max.
100
5.5
90
10/23/06
Unit
µA
ns
ns
V
Rev. B
®

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