CY7C1041V33-12ZC CYPRESS [Cypress Semiconductor], CY7C1041V33-12ZC Datasheet - Page 5

• Manufacturer Part Number: CY7C1041V33-12ZC
• Description: 256K x 16 Static RAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Data Retention Characteristics
Switching Characteristics
V
I
t
t
Notes:
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
t
10. No input may exceed V
Parameter
CCDR
CDR
R
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
DBE
LZBE
HZBE
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
BW
9.
DR
[9]
[3]
t
r
< 3 ns for the –12 and –15 speeds. t
Parameter
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
Byte Enable to Data Valid
Byte Enable to Low Z
Byte Disable to High Z
Write Cycle Time
CE LOW to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
Byte Enable to End of Write
[7,8]
CC
+ 0.5V.
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
for Data Retention
r
< 5 ns for the –20 and slower speeds.
[6]
Description
[4]
Description
[6]
[5, 6]
[5, 6]
[5, 6]
Over the Operating Range (continued)
Over the Operating Range (For L version only)
V
CE > V
V
IN
CC
> V
= V
5
CC
CC
DR
Conditions
– 0.3V,
– 0.3V or V
= 2.0V,
Min.
20
20
13
13
13
13
0
3
0
0
0
0
3
3
0
9
1041V33-20
[10]
IN
< 0.3V
Max.
20
20
20
8
8
8
8
8
8
Min.
2.0
t
RC
0
Min.
25
25
15
15
15
10
15
5
0
5
0
0
0
0
0
5
1041V33-25
CY7C1041V33
Max.
330
Max.
25
25
10
10
10
25
10
10
10
Unit
Unit
ns
ns
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A