S9013W BILIN [Galaxy Semi-Conductor Holdings Limited], S9013W Datasheet - Page 2

• Manufacturer Part Number: S9013W
• Description: NPN Silicon Epitaxial Planar Transistor
• Manufacturer: BILIN [Galaxy Semi-Conductor Holdings Limited]

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Range
BL
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
Document number: BL/SSSTF011
Rev.A
NPN Silicon Epitaxial Planar Transistor
Rank
Galaxy Electrical
FE(1)
120-200
Symbol
V
V
V
I
I
I
h
V
V
f
CBO
CEO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
L
Test conditions
I
I
I
V
V
V
V
V
I
I
V
f=30MHz
C
C
E
C
C
@ Ta=25℃ unless otherwise specified
CB
CE
EB
CE
CE
CE
=100μA,I
=100μA,I
=0.1mA,I
=500mA, I
=500mA, I
=5V,I
=40V,I
=20V,I
=1V,I
=1V,I
=6V, I
C
C
C
C
=0
=50mA
=500mA
E
B
= 20mA
C
E
B
=0
=0
=0
=0
=0
B
B
200-350
= 50mA
= 50mA
H
MIN
40
25
5
120
40
150
Production specification
www.galaxycn.com
TYP
S9013W
300-400
MAX
0.1
0.1
0.1
400
0.6
1.2
J
2
UNIT
V
V
V
μA
μA
μA
V
V
MHz