S9013W BILIN [Galaxy Semi-Conductor Holdings Limited], S9013W Datasheet
S9013W
Related parts for S9013W
S9013W Summary of contents
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... Emitter-Base Voltage V EBO Collector Current -Continuous I C Collector Dissipation P C Junction and Storage Temperature stg Document number: BL/SSSTF011 Rev 500mA） Lead-free Marking J3 Production specification S9013W SOT-323 Package Code SOT-323 Value Units 500 mA 200 mW -55~150 ℃ www.galaxycn.com 1 ...
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... C V =1V,I =50mA =1V,I =500mA =500mA 50mA CE(sat) I =500mA 50mA BE(sat) V =6V 20mA f=30MHz FE(1) L 120-200 200-350 Production specification S9013W MIN TYP MAX 0.1 0.1 0.1 120 400 40 0.6 1.2 150 H J 300-400 www.galaxycn.com UNIT μA μA μ MHz 2 ...
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... BL Galaxy Electrical NPN Silicon Epitaxial Planar Transistor TYPICAL CHARACTERISTICS Document number: BL/SSSTF011 Rev.A @ Ta=25℃ unless otherwise specified Production specification S9013W www.galaxycn.com 3 ...
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... NPN Silicon Epitaxial Planar Transistor PACKAGE OUTLINE Plastic surface mounted package PACKAGE INFORMATION Device Package S9013W SOT-323 Document number: BL/SSSTF011 Rev.A Dim All Dimensions in mm Shipping 3000/Tape&Reel Production specification S9013W SOT-323 SOT-323 Min Max 1.8 2.2 1.15 1.35 1.0Typical 0.15 0.35 0.25 0.40 1.2 1.4 0.02 0.1 0.1Typical 2.1 2.3 www.galaxycn.com 4 ...