MC68HC711PH8 Motorola, MC68HC711PH8 Datasheet - Page 72

• Manufacturer Part Number: MC68HC711PH8
• Description: High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
• Manufacturer: Motorola

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08/Apr/97@13:55 [DS97 v 4.1]
BYTE — EEPROM byte erase mode
This bit may be read or written at any time.
ROW — EEPROM row/bulk erase mode (only valid when BYTE = 0)
This byte can be read or written at any time.
ERASE — Erase/normal control for EEPROM
This byte can be read or written at any time.
EELAT — EEPROM latch control
When the EELAT bit is cleared, the EEPROM can be read as if it were a ROM. The block protect
register has no effect during reads. This bit can be read and written at any time.
EEPGM — EEPROM program command
This bit can be read at any time but can only be written if EELAT = 1.
Note:
MOTOROLA
3-26
1 (set)
0 (clear) –
1 (set)
0 (clear) –
1 (set)
0 (clear) –
1 (set)
0 (clear) –
1 (set)
0 (clear) –
If EELAT = 0 (normal operation) then EEPGM = 0 (programming voltage disconnected).
–
–
–
–
–
Erase only one byte of EEPROM.
Row or bulk erase mode used.
Erase only one 16 byte row of EEPROM.
Erase all 768 bytes of EEPROM.
Erase mode.
Normal read or program mode.
EEPROM address and data bus set up for programming or erasing.
EEPROM address and data bus set up for normal reads.
Program or erase voltage switched on to EEPROM array.
Program or erase voltage switched off to EEPROM array.
OPERATING MODES AND ON-CHIP MEMORY
—this line does not form part of the document—
Table 3-8 Erase mode selection
Byte
0
0
1
1
Row
0
1
0
1
Bulk erase (all 768 bytes)
Row erase (16 bytes)
Byte erase
Byte erase
Action
PH8.DS03/Modes+mem
MC68HC11PH8
TPG