M29W400DT ST Microelectronics, M29W400DT Datasheet - Page 14

• Manufacturer Part Number: M29W400DT
• Description: 4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
• Manufacturer: ST Microelectronics

M29W400DT, M29W400DB
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
the Erase Suspend Latency Time after the Erase
Suspend Command is issued (see Table 4 for nu-
merical values). Once the Program/Erase Control-
ler has stopped the memory will be set to Read
mode and the Erase will be suspended. If the
Erase Suspend command is issued during the pe-
riod when the memory is waiting for an additional
block (before the Program/Erase Controller starts)
then the Erase is suspended immediately and will
start immediately when the Erase Resume Com-
mand is issued. It is not possible to select any fur-
ther blocks to erase after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. If any attempt is made to
program in a protected block or in the suspended
block then the Program command is ignored and
Table 4. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
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Chip Erase (All bits in the memory set to ‘0’)
Chip Erase
Block Erase (64 Kbytes)
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Erase Suspend Latency Time
Program/Erase Cycles (per Block)
Data Retention
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Parameter
the data remains unchanged. The Status Register
is not read and no error condition is given. Read-
ing from blocks that are being erased will output
the Status Register.
It is also possible to issue the Auto Select and Un-
lock Bypass commands during an Erase Suspend.
The Read/Reset command must be issued to re-
turn the device to Read Array mode before the Re-
sume command will be accepted.
Erase Resume Command. The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
Block Protect and Chip Unprotect Commands.
Each block can be separately protected against
accidental Program or Erase. The whole chip can
be unprotected to allow the data inside the blocks
to be changed.
Block Protect and Chip Unprotect operations are
described in Appendix B.
100,000
Min
20
CC
CC
.
after 100,00 program/erase cycles.
Typ
2.5
0.8
5.5
2.8
10
18
6
(1,2)
Max
200
35
30
15
25
6
(4)
(3)
(3)
(3)
(4)
(3)
(2)
cycles
years
Unit
µs
µs
s
s
s
s
s