M29W400DT ST Microelectronics, M29W400DT Datasheet
M29W400DT
Manufacturer Part Number
M29W400DT
Description
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
Manufacturer
ST Microelectronics
Datasheet
1.M29W400DT.pdf
(36 pages)
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FEATURES SUMMARY
February 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
SUPPLY VOLTAGE
– V
ACCESS TIME: 45, 55, 70ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithms
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400DT: 00EEh
– Bottom Device Code M29W400DB: 00EFh
Read
Erase Suspend
CC
= 2.7V to 3.6V for Program, Erase and
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Figure 1. Packages
3V Supply Flash Memory
TFBGA48 (ZA)
TSOP48 (N)
12 x 20mm
SO44 (M)
6 x 9mm
M29W400DB
M29W400DT
FBGA
PRELIMINARY DATA
1/36
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