CY7C1009B Cypress Semiconductor, CY7C1009B Datasheet - Page 5

• Manufacturer Part Number: CY7C1009B
• Description: 128K x 8 Static RAM
• Manufacturer: Cypress Semiconductor

Switching Characteristics
Data Retention Characteristics
Document #: 38-05038 Rev. **
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
WRITE CYCLE
t
t
t
t
t
t
t
t
t
t
Parameter
V
I
t
t
Parameter
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
WC
SCE
AW
HA
SA
PWE
SD
HD
LZWE
HZWE
CCDR
CDR
R
DR
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE
Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE
CE
CE
Power-Up
CE
Power-Down
Write Cycle Time
CE
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z
WE LOW to High Z
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
[8]
1
1
1
1
1
1
LOW to Data Valid, CE
LOW to Low Z, CE
HIGH to High Z, CE
LOW to Power-Up, CE
HIGH to Power-Down, CE
LOW to Write End, CE
for Data Retention
Description
[9]
Description
[5]
[7]
[6, 7]
[6, 7]
Over the Operating Range (continued)
2
2
HIGH to Low Z
LOW to High Z
Over the Operating Range (Low Power version only)
2
2
2
HIGH to Write End
HIGH to
HIGH to Data
2
LOW to
[7]
[6, 7]
No input may exceed V
V
CE
V
CC
IN
1
> V
= V
> V
Min.
7C1009B-20
20
20
15
15
12
10
7C109B-20
3
0
3
0
0
0
0
3
CC
DR
CC
– 0.3V or V
= 2.0V,
– 0.3V or CE
Conditions
Max.
20
20
20
8
8
8
8
IN
CC
Min.
< 0.3V
7C1009B-25
2
7C109B-25
25
25
20
20
15
15
5
0
5
0
0
0
0
5
< 0.3V,
+ 0.5V
Max.
25
25
10
10
10
25
10
Min.
200
Min.
2.0
7C1009B-35
35
35
25
25
20
20
7C109B-35
0
5
0
5
0
0
0
0
5
CY7C1009B
CY7C109B
Max
150
Min.
35
35
15
15
15
35
15
Page 5 of 12
Unit
Unit
ns
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
s