MT4C1M16E5 Micron Technology, MT4C1M16E5 Datasheet - Page 20

• Manufacturer Part Number: MT4C1M16E5
• Description: EDO DRAM
• Manufacturer: Micron Technology

TIMING PARAMETERS
NOTE: 1. End of first CBR REFRESH cycle.
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
SYMBOL
t
t
t
t
t
t
ASR
CHR
CP
CRP
CSR
RAH
CASL#/CASH#
ADDR
RAS#
CASL#/CASH#
Q
V
V
V
V
V
V
V
V
OH
OL
RAS#
IH
IL
IH
IL
IH
IL
DQ
WE#
MIN
V
V
0
8
8
5
5
9
V
V
V
V
OH
OL
V
V
IH
IL
IH
IL
IH
IL
-5
MAX
t CRP
t ASR
t RPC
t CP
MIN
10
10
10
0
5
5
t RP
ROW
t CSR
(Addresses and OE# = DON’T CARE)
t WRP
-6
RAS#-ONLY REFRESH CYCLE
(OE# and WE# = DON’T CARE)
t RAH
MAX
t WRH
t CHR
t RAS
CBR REFRESH CYCLE
UNITS
ns
ns
ns
ns
ns
ns
NOTE 1
t RAS
20
t RPC
SYMBOL
t
t
t
t
t
t
RAS
RC
RP
RPC
WRH
WRP
OPEN
OPEN
t RP
t RC
t CSR
t WRP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t CHR
t WRH
MIN
t RPC
50
84
30
5
8
8
t RAS
-5
16Mb: 1 MEG x16
t RP
10,000
MAX
MIN
104
60
40
10
10
5
EDO DRAM
DON’T CARE
UNDEFINED
-6
ROW
©2001, Micron Technology, Inc
10,000
MAX
UNITS
ns
ns
ns
ns
ns
ns