S29GL-A SPANSION [SPANSION], S29GL-A Datasheet - Page 3

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S29GL-A

Manufacturer Part Number
S29GL-A
Description
S29GL-A MirrorBit Flash Family
Manufacturer
SPANSION [SPANSION]
Datasheet
Data Sheet
Distinctive Characteristics
Architectural Advantages
Performance Characteristics
This document contains information on one or more products under development at Spansion LLC. The information is intended to help you evaluate this product. Do not
design in this product without contacting the factory. Spansion LLC reserves the right to change or discontinue work on this proposed product without notice.
S29GL-A MirrorBit™ Flash Family
S29GL064A, S29GL032A, and S29GL016A
64 Megabit, 32 Megabit, and 16 Megabit
3.0-Volt only Page Mode Flash Memory
Featuring 200 nm MirrorBit Process Technology
Single power supply operation
— 3 volt read, erase, and program operations
Manufactured on 200 nm MirrorBit process
technology
Secured Silicon Sector region
— 128-word/256-byte sector for permanent, secure
— May be programmed and locked at the factory or by
Flexible sector architecture
— 64Mb (uniform sector models): 128 32 Kword (64 KB)
— 64Mb (boot sector models): 127 32 Kword (64 KB)
— 32Mb (uniform sector models): 64 32Kword (64KB)
— 32Mb (boot sector models): 63 32Kword (64KB)
— 16MB (boot sector models): 31 31Kword (64KB)
Compatibility with JEDEC standards
— Provides pinout and software compatibility for single-
100,000 erase cycles typical per sector
20-year data retention typical
High performance
— 90 ns access time
— 4-word/8-byte page read buffer
— 25 ns page read times
— 16-word/32-byte write buffer which reduces overall
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
the customer
sectors
sectors + 8 4Kword (8KB) boot sectors
sectors
sectors + 8 4Kword (8KB) boot sectors
sectors + 8 4Kword (8KB) boot sectors
power supply flash, and superior inadvertent write
protection
programming time for multiple-word updates
Publication Number S29GL-A_00
Revision A
Software & Hardware Features
Amendment 3
Low power consumption (typical values at 3.0 V, 5
MHz)
— 18 mA typical active read current
— 50 mA typical erase/program current
— 1 µA typical standby mode current
Package options
— 48-pin TSOP
— 56-pin TSOP
— 64-ball Fortified BGA
— 48-ball fine-pitch BGA
Software features
— Program Suspend & Resume: read other sectors
— Erase Suspend & Resume: read/program other
— Data# polling & toggle bits provide status
— CFI (Common Flash Interface) compliant: allows host
— Unlock Bypass Program command reduces overall
Hardware features
— Sector Group Protection: hardware-level method of
— Temporary Sector Unprotect: V
— WP#/ACC input accelerates programming time
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) detects program or
before programming operation is completed
sectors before an erase operation is completed
system to identify and accommodate multiple flash
devices
multiple-word programming time
preventing write operations within a sector group
charging code in locked sectors
(when high voltage is applied) for greater throughput
during system production. Protects first or last sector
regardless of sector protection settings on uniform
sector models
erase cycle completion
Issue Date April 22, 2005
INFORMATION
ID
ADVANCE
-level method of

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