S29GL-A SPANSION [SPANSION], S29GL-A Datasheet - Page 22

• Manufacturer Part Number: S29GL-A
• Description: S29GL-A MirrorBit Flash Family
• Manufacturer: SPANSION [SPANSION]

20
Standby Mode
An erase operation can erase one sector, multiple sectors, or the entire device.
Tables 7
Refer to the DC Characteristics table for the active current specification for the
write mode. The AC Characteristics section contains timing specification tables
and timing diagrams for write operations.
Write Buffer
Write Buffer Programming allows the system write to a maximum of 16 words/
32 bytes in one programming operation. This results in faster effective program-
ming time than the standard programming algorithms. See
page 20
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This
is one of two functions provided by the WP#/ACC or ACC pin, depending on
model number. This function is primarily intended to allow faster manufacturing
throughput at the factory.
If the system asserts V
mentioned Unlock Bypass mode, temporarily unprotects any protected sector
groups, and uses the higher voltage on the pin to reduce the time required for
program operations. The system would use a two-cycle program command se-
quence as required by the Unlock Bypass mode. Removing V
ACC or ACC pin, depending on model number, returns the device to normal op-
eration. Note that the WP#/ACC or ACC pin must not be at V
other than accelerated programming, or device damage may result. WP# con-
tains an internal pullup; when unconnected, WP# is at V
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to
toselect Command Sequence on page 44
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at V
V
is in the standby mode, but the standby current is greater. The device requires
standard access time (t
standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws ac-
tive current until the operation is completed.
Refer to the
IH
.) If CE# and RESET# are held at V
for more information.
–
25
DC Characteristics on page 64
indicate the address space that each sector occupies.
IO
± 0.3 V. (Note that this is a more restricted voltage range than
HH
CE
S29GL-A MirrorBit™ Flash Family
) for read access when the device is in either of these
on this pin, the device automatically enters the afore-
A d v a n c e
IH
, but not within V
for more information.
Autoselect Mode on page 30
for the standby current specification.
I n f o r m a t i o n
IH
IO
.
± 0.3 V, the device
HH
HH
Write Buffer on
from the WP#/
for operations
and
S29GL-A_00_A3 April 22, 2005
Au-