S1T8528X0 SAMSUNG [Samsung semiconductor], S1T8528X0 Datasheet - Page 8

• Manufacturer Part Number: S1T8528X0
• Description: ENHANCED-1 CHIP CT0 RF IC
• Manufacturer: SAMSUNG [Samsung semiconductor]

S1T8528
ELECTRICAL CHARACTERISTICS
Operating Voltage
RECEIVER
( V
Sensitivity
(input for 12dB SINAD)
Input for -3dB Limiting
S/N Ratio
Recovered Audio Output
Recovered Audio Output
Voltage Drop
Detector Output Resistance
Detect Output Voltage
Detector Output Distortion
Comparator Threshold
Voltage Difference
Comparator Output Voltage 1
Comparator Output Voltage 2 V
First Mixer Conversion
Voltage Gain
Second Mixer Conversion
Voltage Gain
Demodulator Bandwidth
Limiter Input Sensitivity
AM Rejection Ratio
First Mixer 3rd Order
Intercept Point
First Mixer Input Impedance
First Mixer output Impedance Ro
8
CC
= 3.6V, f
Characteristic
C
= 49.7MHz, f
DEV
Vcc
V
V
S/N
V
V
R
V
THD
V
DBW
V
AMRR
IMD3
C
R
V
G
G
SEN
LIM
O(RA)
O(RAD
O(DET)
OH
OL
I(LIM)
O(DET)
I(1M)
=
I(1M)
Symbol
TH
(1M)
V(1M)
V(2M)
DET
3kHz, f
/
)
MOD
MIX1 Matched Impedance
Input
MIX1 Matched Impedance
Input
RFin = 1mVrms
RFin = 1mVrms,
After 2nd stage LPF
Vcc = 5.5V
RFin = 1mVrms
RFin = 1mVrms
RFin = 1mVrms
RFin = 1mVrms
(with CCITT Filter)
V
R
V
R
V
R
V
R
V
R
RFin = 1mVrms
Fc = 455kHz , 3dB Limiting
RFin = 1mVrms
AM MOD = 30% @1kHz
MIX1 Input 50
Termination
Fc = 50MHz
Fc = 10.7MHz
COMP
COMP
COMP
MIX1 1/2
MIX2
HYS
HYS
HYS
L
L
= 1kHz,Ta = 25°C, unless otherwise specified )
= 330k
= 1.5k
Test Conditions
= 180K
= 180k
= 180k
= 1mVrms
= 360mVp-p
=360mVp-p
= 360mVp-p
= 1mVrms
2.0V
ENHANCED-1 CHIP CT0 RF IC
Vcc-0.4
Min.
147
2.0
1.0
48
70
12
18
3.0
Typ.
177
110
690
330
0.7
0.7
1.2
1.5
1.0
0.1
7.2
55
15
22
10
20
40
1.5
15
Max.
207
150
5.5
2.0
2.0
2.0
2.5
0.4
18
26
40
mVrms
uVrms
dBm
Unit
Vrms
Vrms
kHz
mV
K
dB
dB
dB
dB
dB
pF
%
V
V
V
V