S1T8528X0 SAMSUNG [Samsung semiconductor], S1T8528X0 Datasheet - Page 10

• Manufacturer Part Number: S1T8528X0
• Description: ENHANCED-1 CHIP CT0 RF IC
• Manufacturer: SAMSUNG [Samsung semiconductor]

S1T8528
ELECTRICAL CHARACTERISTICS (Continued)
Expander Gain Difference
Expander Output Distortion
Mute Attenuation Ratio
Expander Maximum Output
Voltage
Maximum Output Voltage
Input Current
Input Voltage
Output Current
Output Voltage
PLL regulator voltage
Regulator Load Current
10
Characteristic
THD
ATT
V
V
I
I
V
V
I
I
V
V
V
V
V
I
IH
IL
OH
OL
REG
G
G
G
OEXP(MAX)
OSPK(MAX)
IH
IL
OH1
OL1
OH2
OL2
PLLREG
Symbol
V1(EXP)
V2(EXP)
V3(EXP)
MUTE
EXP
Vin
Vin
Vin
Vin
Vin
Vin
THD = 10%
R
RL = 600
Vin = Vcc
Vin = 0V
Vout = Vcc
Vout = 0V
PDT,PDR: Io = -0.3mA
( Sourcing )
PDT,PDR: Io = 0.3mA
( Sinking )
LD,f
( Sourcing )
LD,f
( Sinking )
Vout = V
L
E
E
E
E
E
E
= 150
MCU
MCU
= 10dB
=
= 30dB
= 63.2mVrms
= 63.2mVrms
= Variable
Test Conditions
: Io =
: Io = 0.1mA
REG
20dB
(OPEN)-0.05V
0.1mA
0dB
0dB
ENHANCED-1 CHIP CT0 RF IC
Vcc-0.3
Vcc-0.4
Vcc-0.5
Min.
1.90
800
0.3
0.3
60
1.0
1.5
2.0
5
Typ.
2.05
0.5
2.2
3.0
3.0
80
0
0
0
Max.
2.20
1.0
1.5
2.0
1.0
0.3
0.4
0.5
5
-
mVrms
Vp-p
Vp-p
Unit
mA
mA
mA
dB
dB
dB
dB
%
V
V
V
V
V
V
V
A
A