N02L63W2AB25IT ONSEMI [ON Semiconductor], N02L63W2AB25IT Datasheet

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N02L63W2AB25IT

Manufacturer Part Number
N02L63W2AB25IT
Description
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
©2008 SCILLC. All rights reserved.
July 2008 - Rev. 9
2Mb Ultra-Low Power Asynchronous CMOS SRAM
128K × 16 bit
Overview
The N02L63W2A is an integrated memory device
containing a 2 Mbit Static Random Access Memory
organized as 131,072 words by 16 bits. The device
is designed and fabricated using ON
Semiconductor’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N02L63W2A is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
available in JEDEC standard packages compatible
with other standard 128Kb x 16 SRAMs.
Product Family
N02L63W2AB2
N02L63W2AT2
N02L63W2AB
N02L63W2AT
Part Number
44 - TSOP II Green
48 - BGA Green
Package Type
44 - TSOP II
o
48 - BGA
C to +85
o
C and is
-40
Temperature
Operating
o
C to +85
o
C 2.3V - 3.6V
Features
• Single Wide Power Supply Range
• Very low standby current
• Very low operating current
• Very low Page Mode operating current
• Simple memory control
• Low voltage data retention
• Very fast output enable access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
2.3 to 3.6 Volts
2.0µA at 3.0V (Typical)
2.0mA at 3.0V and 1µs (Typical)
0.8mA at 3.0V and 1µs (Typical)
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
Vcc = 1.8V
30ns OE access time
able
Supply
Power
(Vcc)
55ns @ 2.7V
70ns @ 2.3V
Speed
N02L63W2A
(I
SB
Standby
Current
), Typical
2 µA
Publication Order Number:
2 mA @ 1MHz
Current (Icc),
Operating
Typical
N02L63W2A/D

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N02L63W2AB25IT Summary of contents

Page 1

Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit Overview The N02L63W2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ...

Page 2

Pin Configuration PIN ONE I/O 8 CE1 6 ...

Page 3

Functional Block Diagram Word Address Address Inputs Decode Logic Page Address Address Inputs Decode A4 - A16 Logic CE1 CE2 Control WE Logic Functional Description CE1 CE2 ...

Page 4

Absolute Maximum Ratings Item Voltage on any pin relative to V Voltage on V Supply Relative Power Dissipation Storage Temperature Operating Temperature Soldering Temperature and Time 1. Stresses greater than those listed above may cause permanent damage ...

Page 5

Power Savings with Page Mode Operation ( Page Address (A4 - A16) Word Address (A0 - A3) CE1 CE2 OE LB, UB Note: Page mode operation is a method of addressing the SRAM to save operating current. The ...

Page 6

Timing Test Conditions Item Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load Operating Temperature Timing Item Read Cycle Time Address Access Time Chip Enable to Valid Output Output Enable to Valid Output ...

Page 7

Timing of Read Cycle (CE1 = Address Previous Data Valid Data Out Timing Waveform of Read Cycle (WE=V Address CE1 CE2 OE LB LBLZ, High-Z Data Out , WE = CE2 = ...

Page 8

Timing Waveform of Write Cycle (WE control) Address CE1 CE2 LB High-Z Data In Data Out Timing Waveform of Write Cycle (CE1 Control) Address CE1 (for CE2 Control, use inverted signal) LB Data In Data Out ...

Page 9

TSOP II Package (T44) 18.41±0.13 10.16±0.13 0.80mm REF DETAIL B 0.20 0.00 Note: 1. All dimensions in inches (Millimeters) 2. Package dimensions exclude molding flash 11.76±0.20 0.45 0.30 1.10±0.15 0.80mm REF Rev Page ...

Page 10

Ball Grid Array Package D A1 BALL PAD CORNER (3) TOP VIEW K TYP J TYP BOTTOM VIEW Dimensions (mm 6±0.10 8±0.10 0.375 0.28±0.05 1.24±0.10 E SIDE VIEW 1. DIMENSION IS MEASURED AT THE A1 BALL PAD ...

Page 11

... N02L63W2AT25I Green 44-TSOP II (RoHS Compliant) N02L63W2AB5I Leaded 48-BGA N02L63W2AB25I Green 48-BGA (RoHS Compliant) N02L63W2AT5IT Leaded 44-TSOP II N02L63W2AT25IT Green 44-TSOP II (RoHS Compliant) N02L63W2AB5IT Leaded 48-BGA N02L63W2AB25IT Green 48-BGA (RoHS Compliant) Revision History Revision Date A Jan. 2001 B May 2001 C Sept. 2001 D Dec. 2001 E Nov ...

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