C1227 IMP [IMP, Inc], C1227 Datasheet
C1227
Manufacturer Part Number
C1227
Description
HV BiCMOS 1.2mm 30V Double Metal - Double Poly
Manufacturer
IMP [IMP, Inc]
Datasheet
1.C1227.pdf
(2 pages)
© IMP, Inc.
N-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
P-Channel High Voltage Transistor
Threshold Voltage
Punch Through Voltage
ON Resistance
P-Channel Low Voltage Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-2 to Metal-1
Vertical NPN Transistor
Beta
Early Voltage
Cut-Off Frequency
HVBVDSS
HVBVDSS
BVDSS
HVPR
Symbol
Symbol
HVPR
Symbol
Symbol
BVDSS
VTFP
VTF
Electrical Characteristics
HVT
HVT
Leff
Leff
C
VT
C
VT
C
h
V
W
W
M1P
f
MM
N
OX
FE
N
P
A
P
P(P)
N
P
N
N
P
P
30V Double Metal - Double Poly
N
P
0N
0N
N
P
N
P
P
Minimum
Minimum
Minimum
Minimum
1.338
0.040
0.043
0.50
64.0
1.20
–0.7
–0.8
0.35
20.0
1.35
–36
–10
0.7
0.4
36
10
–8
50
8
V
V
Typical
Typical
Typical
Typical
DS
GS
1.439
0.046
0.050
0.65
75.0
1.35
0.45
–0.9
–0.6
0.50
25.0
1.50
11.0
0.40
1.89
–18
140
0.9
1.4
0.6
18
34
= 30V
= 5V
Process C1227
HV BiCMOS 1.2 m
Maximum
Maximum
Maximum
Maximum
1.569
0.052
0.057
0.80
86.0
1.50
–0.4
–1.1
0.65
30.0
1.65
240
1.1
0.8
T=25
o
C Unless otherwise noted
fF/ m
fF/ m
fF/ m
Unit
m -
Unit
m -
Unit
Unit
GHz
cm
V
cm
A/V
V
A/V
V
V
V
V
V
V
V
V
V
V
V
V
1/2
m
m
1/2
m
m
2
2
ISO 9001 Registered
2
2
2
2
2
@V
@V
Comments
100x1.4 m
100x1.4 m
100x100 m
100x1.4 m
Per side
Comments
@V
V
100x1.4 m
100x1.4 m
100x100 m
100x1.4 m
Per side
Comments
Comments
4.5x4.5 m
DS
GS
DS
GS
= 0.1V
= –5V
= –0.1V
= 5V
71
®
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C1227 Summary of contents
Page 1
... Poly Field Threshold Voltage VTF P(P) Capacitance Symbol Gate Oxide C OX Metal-1 to Poly1 C M1P Metal-2 to Metal Vertical NPN Transistor Symbol Beta h FE Early Voltage V A Cut-Off Frequency f © IMP, Inc. Process C1227 HV BiCMOS 1.2 m Minimum Typical Maximum 0 30V DS 0.4 0.6 0.50 0.65 0.80 64.0 75.0 86 ...
Page 2
... Diffusion Overlap of Contact 2.0 m Poly Overlap of Contact 1.4/2.0 m Metal-1 Overlap of Contact 3.0/2.0 m Contact to Poly Space 1.4x1.4 m Minimum Pad Opening 1.4/1.6 m Metal-1 Overlap of Via 2.6/1.6 m Metal-2 Overlap of Via 2.6/1.6 m Minimum Pad Opening 1.5/2.0 m Minimum Pad to Pad Spacing 2.5/2.0 m Minimum Pad Pitch Process C1227 Maximum Unit Comments 2 n-well 50 100 2. ...