C1004 IMP Inc, C1004 Datasheet
C1004
Manufacturer Part Number
C1004
Description
Process C1004
Manufacturer
IMP Inc
Datasheet
1.C1004.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C10046F5-PN2-SSA-A
Manufacturer:
NEC
Quantity:
20 000
© IMP, Inc.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to SIlicon
Metal-2 to Metal-1
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Symbol
BVDSS
Symbol
Symbol
BVDSS
Symbol
VTF
VTF
Electrical Characteristics
T
T
C
Leff
T
C
C
N-well(f)
Leff
VT
x
x
C
VT
POLY
FIELD
PASS
GOX
M1P
W
jN+
MIS
MM
W
jP+
N+
P+
M1
M2
ox
P
P
N
N
P(P)
P(N )
P
N
P
P
N
N
P
N
Minimum
Minimum
Minimum
Minimum
–0.85
1.52
0.83
0.55
0.60
–10
0.8
24
–7
20
60
15
74
10
7
200+900
Typical
Typical
Typical
Typical
0.046
0.028
0.038
1.64
–1.0
0.98
0.85
0.45
0.75
0.60
0.75
700
0.4
1.0
0.5
28
35
80
20
22
50
30
0.8
87
Process C1004
Maximum
Maximum
Maximum
Maximum
–1.15
1.82
1.13
1.22
0.95
0.90
100
100
32
50
30
T=25
5 Volt Digital
CMOS 1.0 m
o
C Unless otherwise noted
fF/ m
fF/ m
fF/ m
fF/ m
m /
m /
K /
Unit
Unit
Unit
V
Unit
V
A/V
nm
nm
nm
A/V
V
V
V
1/2
/
/
/
V
V
V
m
m
m
m
1/2
m
m
ISO 9001 Registered
2
2
2
2
2
2
Comments
Comments
100x1.0 m
100x1.0 m
100x100 m
100x1.0 m
Per side
Comments
n-well
oxide+nit.
Comments
100x1.0 m
100x1.0 m
100x100 m
100x1.0 m
Per side
17
®
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C1004 Summary of contents
Page 1
... POLY Metal-1 Sheet Resistance M1 Metal-2 Sheet Resistance M2 Passivation Thickness T PASS Capacitance Symbol Gate Oxide C ox Metal-1 to Poly1 C M1P Metal-1 to SIlicon C MIS Metal-2 to Metal © IMP, Inc. Process C1004 Minimum Typical Maximum 0.55 0.75 0.95 0. 100 0.60 0.75 0.90 0 Minimum Typical Maximum –0.85 –1.0 –1.15 ...
Page 2
... N-well – p epi + p substrate 5.0V –15.0 –12 4.0V –9 3.0V –6 2.0V –3 1. 4.0 5.0 DS P-ch Transistor IV Characteristics of a 20/1.2 device Process C1004 2.0 / 1.2 m 7.0 m 0.8 m 0.7 m 0.7 m 0.7 m 0.7 m 0.7 m 65x65 m 5.0 m 80.0 m LTO Field Oxide + + VD, W/L = 20/1 –5. –4. –3. –2.0V – ...