NSS40300MZ4_10 ONSEMI [ON Semiconductor], NSS40300MZ4_10 Datasheet
NSS40300MZ4_10
Manufacturer Part Number
NSS40300MZ4_10
Description
Bipolar Power Transistors
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
1.NSS40300MZ4_10.pdf
(7 pages)
NSS40300MZ4
Bipolar Power Transistors
40 V, 3.0 A, Low V
PNP Transistor
transistors are surface mount devices featuring ultra low saturation
voltage (V
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
•
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 1
ON Semiconductor’s e
Typical applications are DC−DC converters and power management
Compliant
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CE(sat)
) and high current gain capability. These are designed
2
PowerEdge family of low V
2
PowerEdge devices to be
CE(sat)
1
CE(sat)
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
40 VOLTS, 2.0 WATTS
A
Y
W
40300
G
ORDERING INFORMATION
PNP TRANSISTOR
3.0 AMPERES
PIN ASSIGNMENT
http://onsemi.com
CASE 318E
Top View Pinout
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
SOT−223
STYLE 1
B 1
Schematic
B
1
C
C
Publication Order Number:
4
C 2,4
2
E 3
E
3
1
NSS40300MZ4/D
MARKING
DIAGRAM
40300G
AYW
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NSS40300MZ4_10 Summary of contents
Page 1
NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low V PNP Transistor 2 ON Semiconductor’s e PowerEdge family of low V transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are ...
Page 2
MAXIMUM RATINGS (T = 25°C unless otherwise ...
Page 3
ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...
Page 4
T C 1 100 T , TEMPERATURE (°C) J Figure 1. Power Derating http://onsemi.com 4 125 150 ...
Page 5
I , COLLECTOR CURRENT (A) C Figure 2. DC Current Gain 0.1 0.01 0.001 0.001 0.01 0 COLLECTOR ...
Page 6
1.1 1.0 0.9 −40°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.1 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 8. Base−Emitter Saturation Voltage 350 300 250 ...
Page 7
0.08 (0003) A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are ...