2PB1219AR NXP [NXP Semiconductors], 2PB1219AR Datasheet - Page 3

• Manufacturer Part Number: 2PB1219AR
• Description: PNP general purpose transistor
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 12
R
I
I
h
h
V
V
C
f
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
FE
CEsat
BEsat
PNP general purpose transistor
th j-a
c
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
p
2PB1219AQ
2PB1219AR
2PB1219AS
2PB1219AQ
2PB1219AR
2PB1219AS
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
IC = −300 mA; IB = −30 mA; note 1
I
I
f = 100 MHz; note 1
E
E
C
C
C
C
E
C
= 0; V
= 0; V
= i
= 0; V
= −150 mA; V
= −500 mA; V
= −300 mA; I
= 50 mA; V
e
= 0; V
3
CB
CB
EB
= −20 V
= −20 V; T
= −4 V
CONDITIONS
CB
CE
note 1
B
= −10 V; f = 1 MHz
CE
CE
= −10 V;
= −30 mA; note 1
CONDITIONS
= −10 V; note 1
= −10 V; note 1
j
= 150 °C
−
−
−
85
120
170
40
−
−
−
100
120
140
MIN.
VALUE
625
Product data sheet
2PB1219A
−100
−5
−100
170
240
340
−
−600
−1.5
15
−
−
−
MAX.
UNIT
K/W
nA
μA
nA
mV
V
pF
MHz
MHz
MHz
UNIT