CR02AM-4 MITSUBISHI [Mitsubishi Electric Semiconductor], CR02AM-4 Datasheet - Page 5

• Manufacturer Part Number: CR02AM-4
• Description: LOW POWER USE PLANAR PASSIVATION TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
120
100
160
140
120
100
10
10
10
REPETITIVE PEAK REVERSE VOLTAGE VS.
80
60
40
20
80
60
40
20
–1
0
10
7
5
3
2
7
5
3
2
7
5
3
2
0
–60
–40 –20
2
1
0
GATE TO CATHODE RESISTANCE (k )
–1
TYPICAL EXAMPLE
GATE TO CATHODE RESISTANCE
–40
JUNCTION TEMPERATURE ( C)
JUNCTION TEMPERATURE ( C)
2 3
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
–20
DISTRIBUTION
HOLDING CURRENT VS.
0
5 7 10
20
0 20 40
0
40
2 3 5 7 10
TYPICAL EXAMPLE
60
T
I
I
H
GT
60
80
j
= 25 C
(25 C)=1mA
(25 C)=25 A
TYPICAL
EXAMPLE
100
80 100 120 140
1
T
j
2 3 5 7 10
120
= 125 C
140
160
2
MITSUBISHI SEMICONDUCTOR THYRISTOR
RATE OF RISE OF OFF-STATE VOLTAGE (V/ s)
120
100
500
400
300
200
100
10
10
10
80
60
40
20
10
0
0
7
5
4
3
2
7
5
4
3
2
RATE OF RISE OF OFF-STATE VOLTAGE
10
3
2
1
10
GATE TO CATHODE RESISTANCE (k )
–1
GATE CURRENT PULSE WIDTH ( s)
0
0
TYPICAL EXAMPLE
# 1 I
# 2 I
T
GATE TO CATHODE RESISTANCE
T
T
j
GATE CURRENT PULSE WIDTH
j
j
2 3
2 3
GATE TRIGGER CURRENT VS.
= 125 C, R
= 25 C
= 25 C
BREAKOVER VOLTAGE VS.
2 3 4
GT
GT
HOLDING CURRENT VS.
# 1
5 7 10
5 7 10
(25 C)=10 A
(25 C)=66 A
# 2
5 7 10
1
0
# 1
# 2
GK
# 1
2 3 5 7 10
2 3 5 7 10
TYPICAL EXAMPLE
I
TYPICAL EXAMPLE
PLANAR PASSIVATION TYPE
= 1k
GT
# 2
13 A
59 A
1
(25 C) I
2 3 4 5 7 10
# 1
# 2
2
1
I
LOW POWER USE
# 1
# 2
GT
2 3 5 7 10
2 3 5 7 10
H
1.6mA
1.8mA
10 A
66 A
(1k )
(25 C)
CR02AM
2
3
2
Sep.2000