blf4g10-120 NXP Semiconductors, blf4g10-120 Datasheet - Page 4

• Manufacturer Part Number: blf4g10-120
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14549
Product data sheet
Fig 1. One-tone CW power gain and drain efficiency
Fig 3. Intermodulation distortion as a function of peak
(dBc)
(dB)
IMD
G
20.5
19.5
18.5
17.5
16.5
p
20
40
60
80
0
V
f = 960 MHz
as functions of load power; typical values
V
f = 960 MHz
envelope load power; typical values
0
0
DS
DS
= 28 V; I
= 28 V; I
D
50
Dq
Dq
100
= 850 mA; T
= 850 mA; T
100
case
case
200
= 25 C;
= 25 C;
150
P
L(PEP)
G
IMD3
IMD5
IMD7
P
p
001aac400
001aac402
L
(W)
(W)
Rev. 01 — 10 January 2006
200
300
80
60
40
20
0
BLF4G10-120; BLF4G10S-120
(%)
D
Fig 2. Two-tone CW power gain and drain efficiency
Fig 4. Third order intermodulation distortion as a
IMD3
(dBc)
(dB)
(1) I
(2) I
(3) I
(4) I
G
p
20
19
18
17
20
40
60
80
0
V
f = 960 MHz
as functions of peak envelope load power;
typical values
V
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
0
0
DS
DS
= 650 mA
= 750 mA
= 850 mA
= 950 mA
= 28 V; I
= 28 V; T
D
2
1
4
3
Dq
case
100
100
= 850 mA; T
= 25 C; f = 960 MHz
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
case
200
200
= 25 C;
G
P
P
p
L(PEP)
L(PEP)
001aac401
001aac403
(W)
(W)
300
300
60
40
20
0
(%)
D
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