bc817ds NXP Semiconductors, bc817ds Datasheet - Page 3

• Manufacturer Part Number: bc817ds
• Description: Npn General Purpose Double Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
CHARACTERISTICS
T
Notes
1. Pulse test: t
2. V
2002 Nov 22
R
Per transistor
I
I
h
V
V
C
f
SYMBOL
SYMBOL
amb
CBO
EBO
T
FE
CEsat
BE
th j-a
c
NPN general purpose double transistor
= 25 C unless otherwise specified.
BE
decreases by approximately 2 mV/K with increasing temperature.
thermal resistance from junction to
ambient
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter voltage
collector capacitance
transition frequency
p
300 s;
PARAMETER
PARAMETER
0.02.
note 1
V
V
V
V
V
V
notes 1 and 2
V
V
f = 100 MHz
C
CB
CB
EB
CE
CE
CE
CB
CE
= 500 mA; I
= 5 V; I
= 20 V; I
= 20 V; I
= 1 V; I
= 1 V; I
= 1 V; I
= 10 V; I
= 5 V; I
3
CONDITIONS
C
C
C
C
C
E
E
E
= 0
= 100 mA; note 1
= 500 mA; note 1
= 10 mA;
= 500 mA;
B
CONDITIONS
= 0
= 0; T
= I
= 50 mA; note 1
e
= 0; f = 1 MHz
j
= 150 C
160
40
100
MIN.
5
TYP.
VALUE
Product specification
208
BC817DS
100
5
100
400
700
1.2
MAX.
2
UNIT
K/W
.
nA
nA
mV
V
pF
MHz
UNIT
A