std60nh03l STMicroelectronics, std60nh03l Datasheet - Page 4

• Manufacturer Part Number: std60nh03l
• Description: N-channel 30v - 0.0075 W - 60a Dpak/ipak Stripfet Iii Power Mosfet
• Manufacturer: STMicroelectronics

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Gate charge for syncronous operation. See
V
Symbol
Symbol
CASE
R
V
Q
(BR)DSS
g
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
R
fs
Q
gls
oss
t
t
rss
iss
gd
r
gs
G
f
g
(1)
(2)
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Gate input resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Third-quadrant gate
charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
f=1 MHz Gate
DC Bias = 0
Test Signal
Level = 20mV
Open Drain
V
R
(see
V
V
(see
V
I
D
D
C
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
DD
DS
G
Chapter 4: Appendix A
= 250µA, V
= 60 A
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= Max rating
= Max rating,
= ± 20V
= V
= 10V, I
= 5V, I
= 15V, I
= 25V, f = 1MHz,
= 0
= 5V, R
< 0 V, V
= 15V, I
= 15V, I
Figure
Figure
GS
, I
D
G
13)
14)
D
D
GS
D
D
GS
D
= 30A
GS
= 4.7Ω
= 30A
= 18A
= 30A
= 60A,
= 250µA
= 5V
= 10 V,
=0
STD60NH03L - STD60NH03L-1
Min.
Min.
30
1
0.0075
0.009
2200
Typ.
Typ.
15.7
380
1.5
8.3
3.4
25
49
21
95
19
15
15
0.009
0.017
Max.
Max.
±100
21
10
1
Unit
Unit
nC
nC
nC
nC
pF
pF
pF
µA
µA
nA
ns
ns
ns
ns
S
Ω
V
V
Ω
Ω