pmbt3946ypn NXP Semiconductors, pmbt3946ypn Datasheet - Page 3

• Manufacturer Part Number: pmbt3946ypn
• Description: 40 V, 200 Ma Npn/pnp General-purpose Double Transistor
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Limiting values
PMBT3946YPN_1
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Symbol
TR1 (NPN)
V
TR2 (PNP)
V
Per transistor; for the PNP transistor with negative polarity
V
V
I
I
I
P
Per device
P
T
T
T
C
CM
BM
Fig 1.
j
amb
stg
CBO
CBO
CEO
EBO
tot
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
FR4 PCB, standard footprint
Per device: Power derating curve
Limiting values
Parameter
collector-base voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
(mW)
P
tot
400
300
200
100
Rev. 01 — 12 May 2009
0
75
40 V, 200 mA NPN/PNP general-purpose double transistor
25
Conditions
open emitter
open emitter
open base
open collector
single pulse;
t
single pulse;
t
T
T
25
p
p
amb
amb
1 ms
1 ms
25 C
25 C
75
125
006aab113
T
amb
PMBT3946YPN
[1]
[1]
( C)
175
Min
-
-
-
-
-
-
-
-
-
-
55
65
© NXP B.V. 2009. All rights reserved.
Max
60
40
6
200
200
100
230
350
150
+150
+150
40
Unit
V
V
V
V
mA
mA
mA
mW
mW
C
C
C
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