pmbfj177 NXP Semiconductors, pmbfj177 Datasheet - Page 2

• Manufacturer Part Number: pmbfj177
• Description: P-channel Silicon Field-effect Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DESCRIPTION
Silicon symmetrical p-channel
junction FETs in plastic
microminiature SOT23
envelopes.They are intended for
application with analogue switches,
choppers, commutators etc. using
SMD technology. A special feature is
the interchangeability of the drain and
source connections.
PINNING
Note
1. Drain and source are
Marking codes:
QUICK REFERENCE DATA
April 1995
1 = drain
2 = source
3 = gate
174
175
176
177
Drain-source voltage
Gate-source voltage
Gate current
Total power dissipation
Drain current
Drain-source ON-resistance
P-channel silicon field-effect transistors
up to T
interchangeable.
V
V
DS
DS
: p6X
: p6W
: p6S
: p6Y
= 0,1 V; V
= 15 V; V
amb
= 25 C
GS
GS
= 0
= 0
handbook, halfpage
Fig.1 Simplified outline and symbol, SOT23.
V
P
R
2
I
I
GSO
tot
DS on
V
G
DSS
Top view
DS
1
max.
max.
max.
max.
PMBFJ174
3
2
135
20
85
g
175
125
MAM386
PMBFJ174 to 177
70
7
300
30
30
50
Product specification
d
s
176
250
35
2
177
300
1,5
20
V
V
mA
mW
mA
mA