pesd3v3s2ut NXP Semiconductors, pesd3v3s2ut Datasheet - Page 2

• Manufacturer Part Number: pesd3v3s2ut
• Description: Pesdxs2ut Series Double Esd Protection Diodes In Sot23 Package
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1. * = p : made in Hong Kong.
2004 Apr 15
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Uni-directional ESD protection of up to two lines
Max. peak pulse power: P
Low clamping voltage: V
Ultra-low reverse leakage current: I
ESD protection > 23 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
Computers and peripherals
Communication systems
Audio and video equipment
High speed data lines
Parallel ports.
Double ESD protection diodes
in SOT23 package
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER
(CL)R
pp
pp
= 18 A at t
= 330 W at t
= 20 V at I
MARKING CODE
RM
p
< 700 nA
= 8/20 s.
*U9
*U1
*U2
*U3
*U4
pp
p
= 8/20 s
= 18 A
(1)
2
QUICK REFERENCE DATA
PINNING
V
C
SYMBOL
RWM
d
Fig.1 Simplified outline (SOT23) and symbol.
PIN
1
2
3
1
2
reverse stand-off
voltage
diode capacitance
V
f = 1 MHz
number of
protected lines
R
PARAMETER
= 0 V;
cathode 1
cathode 2
common anode
001aaa490
PESDxS2UT series
3
DESCRIPTION
3.3, 5.2, 12, 15
and 24
207, 152, 38, 32
and 23
2
Product specification
1
2
VALUE
sym022
3
V
pF
UNIT