BTW69-1000 STMICROELECTRONICS [STMicroelectronics], BTW69-1000 Datasheet

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BTW69-1000

Manufacturer Part Number
BTW69-1000
Description
SCR
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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.
FEATURES
.
.
.
DESCRIPTION
The BTW 69 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
ABSOLUTE RATINGS (limiting values)
March 1995
HIGH SURGE CAPABILITY
HIGH ON-STATE CURRENT
HIGH STABILITY AND RELIABILITY
BTW 69 Serie :
INSULATED VOLTAGE = 2500V
(UL RECOGNIZED : E81734)
I T(RMS)
Symbol
Symbol
V DRM
V RRM
I T(AV)
I TSM
Tstg
dI/dt
I 2 t
Tj
Tl
RMS on-state current
(180 conduction angle)
Average
conduction angle,single phase circuit)
Non repetitive surge peak on-state current
( Tj initial = 25 C )
I 2 t value
Critical rate of rise of on-state current
Gate supply : I G = 100 mA di G /dt = 1 A/ s
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Repetitive peak off-state voltage
Tj = 125 C
on-state
Parameter
(RMS)
current
Parameter
(180
BTW 69 N
BTW 69 N
BTW 69
BTW 69
200
200
BTW 69
400
400
tp=8.3 ms
tp=10 ms
tp=10 ms
Tc=70 C
Tc=75 C
Tc=70 C
Tc=75 C
600
600
K
BTW 69 / BTW 69 N
A
(Plastic)
TOP 3
800
800
BTW 69 (N)
G
- 40 to + 150
- 40 to + 125
Value
1250
525
500
100
230
1000
1000
50
55
32
35
1200
1200
SCR
A/ s
Unit
Unit
A 2 s
A
V
A
A
C
C
C
1/5

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BTW69-1000 Summary of contents

Page 1

FEATURES . HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT . HIGH STABILITY AND RELIABILITY BTW 69 Serie : INSULATED VOLTAGE = 2500V (UL RECOGNIZED : E81734) DESCRIPTION The BTW 69 (N) Family of Silicon Controlled Recti- fiers uses a ...

Page 2

BTW 69 (N) THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values (AV 40W ( ELECTRICAL CHARACTERISTICS Symbol I ...

Page 3

Package I T(RMS) A BTW 69 50 (Insulated) BTW (Uninsulated) Fig.1 : Maximum average power dissipation versus average on-state current (BTW 69). Fig.3 : Maximum average power dissipation versus average on-state current (BTW 69 N). V DRM ...

Page 4

BTW 69 (N) Fig.5 : Average on-state current temperature (BTW 69). Fig.7 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1.00 Zth( j-c) 0.10 0.01 1E-3 1E-2 1E E+1 Fig.9 : Non repetitive surge peak ...

Page 5

Fig11 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TOP 3 Plastic 4 Cooling method : C Marking : type number Weight : 4.7 g Information furnished is believed to be accurate ...

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