NTB75N03L09 ONSEMI [ON Semiconductor], NTB75N03L09 Datasheet - Page 2

• Manufacturer Part Number: NTB75N03L09
• Description: Power MOSFET
• Manufacturer: ONSEMI [ON Semiconductor]

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended pad size.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
MAXIMUM RATINGS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
NTP75N03L09
NTP75N03L09G
NTB75N03L09
NTB75N03L09G
NTB75N03L09T4
Drain−to−Source Voltage
Drain−to−Gate Voltage
Gate−to−Source Voltage − Continuous
Non−repetitive (tp
Drain Current
Total Power Dissipation @ T
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche Energy − Starting T
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
(RGS = 10 MW)
− Continuous @ T
− Continuous @ T
− Single Pulse (tp
Derate above 25 C
(V
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
DD
= 38 Vdc, V
GS
Device
10 ms)
C
C
= 25 C
= 100 C
10 ms)
= 10 Vdc, L = 1 mH, I
(T
J
= 25 C unless otherwise noted)
A
C
= 25 C (Note 1)
= 25 C
Rating
L
NTP75N03L09, NTB75N03L09
(pk) = 55 A, V
http://onsemi.com
DS
J
= 40 Vdc)
= 25 C
(Pb−Free)
(Pb−Free)
Package
TO−220
TO−220
D
D
D
2
2
2
2
PAK
PAK
PAK
T
J
Symbol
V
V
and T
R
R
R
V
V
E
I
P
DGB
DSS
DM
T
I
I
qJC
qJA
qJA
GS
GS
AS
D
D
D
L
800 Tape & Reel
stg
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
Shipping
−55 to 150
Value
1500
62.5
225
125
260
1.0
2.5
1.0
30
30
75
59
50
†
20
24
W/ C
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
C/W
mJ
W
W
C
C